Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers

Chao Liu; Taiping Lu; Zhiwei Ren; Xin Chen; Bijun Zhao; Yian Yin; Jinhui Tong; Shuti Li

doi:10.1364/acpc.2012.as3f.3

Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers

Chao Liu, Taiping Lu, Zhiwei Ren, Xin Chen, Bijun Zhao, Yian Yin, Jinhui Tong, Shuti Li

Department of Electrical and Electronic Engineering

Research output: Journal article publication › Conference article › Academic research › peer-review

Abstract

Blue light-emitting diodes with p-GaN and p-AlGaN barriers have been numerically studied. The results show that when the traditional p-GaN barriers were replaced by p-AlGaN barriers, improved light output power and efficiency droop were observed.

Original language	English
Article number	AS3F.3
Journal	Asia Communications and Photonics Conference, ACP
DOIs	https://doi.org/10.1364/acpc.2012.as3f.3
Publication status	Published - 2012
Event	2012 Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China Duration: 7 Nov 2012 → 10 Nov 2012

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Hardware and Architecture

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10.1364/acpc.2012.as3f.3

Cite this

@article{2bbb064140b5420d987a886ee68099a7,

title = "Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers",

abstract = "Blue light-emitting diodes with p-GaN and p-AlGaN barriers have been numerically studied. The results show that when the traditional p-GaN barriers were replaced by p-AlGaN barriers, improved light output power and efficiency droop were observed.",

author = "Chao Liu and Taiping Lu and Zhiwei Ren and Xin Chen and Bijun Zhao and Yian Yin and Jinhui Tong and Shuti Li",

year = "2012",

doi = "10.1364/acpc.2012.as3f.3",

language = "English",

journal = "Asia Communications and Photonics Conference, ACP",

issn = "2162-108X",

publisher = "Optica Publishing Group (formerly OSA)",

note = "2012 Asia Communications and Photonics Conference, ACP 2012 ; Conference date: 07-11-2012 Through 10-11-2012",

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TY - JOUR

T1 - Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers

AU - Liu, Chao

AU - Lu, Taiping

AU - Ren, Zhiwei

AU - Chen, Xin

AU - Zhao, Bijun

AU - Yin, Yian

AU - Tong, Jinhui

AU - Li, Shuti

PY - 2012

Y1 - 2012

N2 - Blue light-emitting diodes with p-GaN and p-AlGaN barriers have been numerically studied. The results show that when the traditional p-GaN barriers were replaced by p-AlGaN barriers, improved light output power and efficiency droop were observed.

AB - Blue light-emitting diodes with p-GaN and p-AlGaN barriers have been numerically studied. The results show that when the traditional p-GaN barriers were replaced by p-AlGaN barriers, improved light output power and efficiency droop were observed.

UR - https://www.scopus.com/pages/publications/84875143870

U2 - 10.1364/acpc.2012.as3f.3

DO - 10.1364/acpc.2012.as3f.3

M3 - Conference article

AN - SCOPUS:84875143870

SN - 2162-108X

JO - Asia Communications and Photonics Conference, ACP

JF - Asia Communications and Photonics Conference, ACP

M1 - AS3F.3

T2 - 2012 Asia Communications and Photonics Conference, ACP 2012

Y2 - 7 November 2012 through 10 November 2012

ER -

Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers

Abstract

ASJC Scopus subject areas

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