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Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers

  • Chao Liu
  • , Taiping Lu
  • , Zhiwei Ren
  • , Xin Chen
  • , Bijun Zhao
  • , Yian Yin
  • , Jinhui Tong
  • , Shuti Li

Research output: Journal article publicationConference articleAcademic researchpeer-review

Abstract

Blue light-emitting diodes with p-GaN and p-AlGaN barriers have been numerically studied. The results show that when the traditional p-GaN barriers were replaced by p-AlGaN barriers, improved light output power and efficiency droop were observed.

Original languageEnglish
Article numberAS3F.3
JournalAsia Communications and Photonics Conference, ACP
DOIs
Publication statusPublished - 2012
Event2012 Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China
Duration: 7 Nov 201210 Nov 2012

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Hardware and Architecture

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