Studies on the retention behavior of SrBi2Ta2O9thin films

Zhigang Zhang; Jinsong Zhu; Jianshe Liu; Xiaomei Lu; Feng Yan; Yening Wang

doi:10.1016/S0040-6090(00)01245-1

Studies on the retention behavior of SrBi₂Ta₂O₉thin films

Zhigang Zhang, Jinsong Zhu, Jianshe Liu, Xiaomei Lu, Feng Yan, Yening Wang

Research output: Journal article publication › Journal article › Academic research › peer-review

2 Citations (Scopus)

Abstract

The retention properties of SrBi2Ta2O9(SBT) thin films are to be studied. Within the first second, the polarization decay increases with increasing of the write/read voltage, and tends to steady value. This could be ascribed to the depolarization fields, which increases with increasing retained polarization. However, the polarization loss is found to be different with various write/read voltages over a range of 1-30 000 s. The effect of ultra-violet irradiation on SBT retention is also to be investigated. Experiments indicate that there was weak pinning of domain walls existing in SBT.

Original language	English
Pages (from-to)	180-183
Number of pages	4
Journal	Thin Solid Films
Volume	375
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01245-1
Publication status	Published - 31 Oct 2000
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)01245-1

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title = "Studies on the retention behavior of SrBi2Ta2O9thin films",

abstract = "The retention properties of SrBi2Ta2O9(SBT) thin films are to be studied. Within the first second, the polarization decay increases with increasing of the write/read voltage, and tends to steady value. This could be ascribed to the depolarization fields, which increases with increasing retained polarization. However, the polarization loss is found to be different with various write/read voltages over a range of 1-30 000 s. The effect of ultra-violet irradiation on SBT retention is also to be investigated. Experiments indicate that there was weak pinning of domain walls existing in SBT.",

author = "Zhigang Zhang and Jinsong Zhu and Jianshe Liu and Xiaomei Lu and Feng Yan and Yening Wang",

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T1 - Studies on the retention behavior of SrBi2Ta2O9thin films

AU - Zhang, Zhigang

AU - Zhu, Jinsong

AU - Liu, Jianshe

AU - Lu, Xiaomei

AU - Yan, Feng

AU - Wang, Yening

PY - 2000/10/31

Y1 - 2000/10/31

N2 - The retention properties of SrBi2Ta2O9(SBT) thin films are to be studied. Within the first second, the polarization decay increases with increasing of the write/read voltage, and tends to steady value. This could be ascribed to the depolarization fields, which increases with increasing retained polarization. However, the polarization loss is found to be different with various write/read voltages over a range of 1-30 000 s. The effect of ultra-violet irradiation on SBT retention is also to be investigated. Experiments indicate that there was weak pinning of domain walls existing in SBT.

AB - The retention properties of SrBi2Ta2O9(SBT) thin films are to be studied. Within the first second, the polarization decay increases with increasing of the write/read voltage, and tends to steady value. This could be ascribed to the depolarization fields, which increases with increasing retained polarization. However, the polarization loss is found to be different with various write/read voltages over a range of 1-30 000 s. The effect of ultra-violet irradiation on SBT retention is also to be investigated. Experiments indicate that there was weak pinning of domain walls existing in SBT.

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U2 - 10.1016/S0040-6090(00)01245-1

DO - 10.1016/S0040-6090(00)01245-1

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EP - 183

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Studies on the retention behavior of SrBi₂Ta₂O₉thin films

Abstract

ASJC Scopus subject areas

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