CNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1 Dec 1997|
|Event||Proceedings of the 1997 MRS Fall Symposium - Boston, MA, United States|
Duration: 1 Dec 1997 → 4 Dec 1997
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials