Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

Jiyan Dai; H. C. Ong; R. P.H. Chang

doi:10.1557/JMR.1999.0181

Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

Jiyan Dai, H. C. Ong, R. P.H. Chang

Research output: Journal article publication › Journal article › Academic research › peer-review

17 Citations (Scopus)

Abstract

Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

Original language	English
Pages (from-to)	1329-1336
Number of pages	8
Journal	Journal of Materials Research
Volume	14
Issue number	4
DOIs	https://doi.org/10.1557/JMR.1999.0181
Publication status	Published - 1 Jan 1999
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/JMR.1999.0181

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@article{92e63be9412547ff85582f6a27e053e5,

title = "Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition",

abstract = "Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.",

author = "Jiyan Dai and Ong, {H. C.} and Chang, {R. P.H.}",

year = "1999",

month = jan,

day = "1",

doi = "10.1557/JMR.1999.0181",

language = "English",

volume = "14",

pages = "1329--1336",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Cambridge University Press",

number = "4",

}

TY - JOUR

T1 - Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

AU - Dai, Jiyan

AU - Ong, H. C.

AU - Chang, R. P.H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

AB - Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

UR - http://www.scopus.com/inward/record.url?scp=0032687438&partnerID=8YFLogxK

U2 - 10.1557/JMR.1999.0181

DO - 10.1557/JMR.1999.0181

M3 - Journal article

SN - 0884-2914

VL - 14

SP - 1329

EP - 1336

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 4

ER -

Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

Abstract

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