Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique

H. W. Lee, Shu Ping Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, B. K. Tay

Research output: Journal article publicationConference articleAcademic researchpeer-review

152 Citations (Scopus)

Abstract

Highly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) thin films have been prepared using the filtered cathodic vacuum arc technique at relatively low temperatures. The properties of ZnO:Al films under the influence of substrate temperature were investigated. It was found that the optical, electrical and structural properties of the films depended directly on substrate temperature during deposition. ZnO:Al films exhibited c-axis oriented crystal growth. The ZnO:Al films were prepared using Zn-Al alloy targets with various Al content. The lowest resistivity of 8×10-4Ωcm was obtained for the Al-doped (5 at%) film prepared at a substrate temperature of 150°C. The optical absorption edge was found to shift to the shorter wavelength with a reduction in substrate temperature, and it was found that doping with Al had the effect of broadening the optical band gap, with both cases being attributed to the Burstein-Moss shift.
Original languageEnglish
Pages (from-to)596-601
Number of pages6
JournalJournal of Crystal Growth
Volume268
Issue number3-4 SPEC. ISS.
DOIs
Publication statusPublished - 1 Aug 2004
Externally publishedYes
EventICMAT 2003, Symposium H, Compound Semiconductors in Electronic - Singapore, Singapore
Duration: 7 Dec 200312 Dec 2004

Keywords

  • A3. Filtered cathodic vacuum arc
  • B1. ZnO:Al
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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