Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique

H. W. Lee, Shu Ping Lau, Y. G. Wang, K. Y. Tse, H. H. Hng, B. K. Tay

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153 Citations (Scopus)


Highly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) thin films have been prepared using the filtered cathodic vacuum arc technique at relatively low temperatures. The properties of ZnO:Al films under the influence of substrate temperature were investigated. It was found that the optical, electrical and structural properties of the films depended directly on substrate temperature during deposition. ZnO:Al films exhibited c-axis oriented crystal growth. The ZnO:Al films were prepared using Zn-Al alloy targets with various Al content. The lowest resistivity of 8×10-4Ωcm was obtained for the Al-doped (5 at%) film prepared at a substrate temperature of 150°C. The optical absorption edge was found to shift to the shorter wavelength with a reduction in substrate temperature, and it was found that doping with Al had the effect of broadening the optical band gap, with both cases being attributed to the Burstein-Moss shift.
Original languageEnglish
Pages (from-to)596-601
Number of pages6
JournalJournal of Crystal Growth
Issue number3-4 SPEC. ISS.
Publication statusPublished - 1 Aug 2004
Externally publishedYes
EventICMAT 2003, Symposium H, Compound Semiconductors in Electronic - Singapore, Singapore
Duration: 7 Dec 200312 Dec 2004


  • A3. Filtered cathodic vacuum arc
  • B1. ZnO:Al
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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