Structural and resistance switching properties of ZnO/ SrTiO3/GaAs heterostructure grown by laser molecular beam epitaxy

Research output: Journal article publicationJournal articleAcademic researchpeer-review

18 Citations (Scopus)

Abstract

ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO3(STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric characteristics of the heterostructure have been investigated. The current-voltage characteristic of the heterostructure reveals an asymmetric and resistance switching behavior, exhibiting a temperature-dependent resistance hysteresis in the temperature range of 50-300 K. These measured properties could be attributed to the charge effect at the interface of the heterostructure.
Original languageEnglish
Article number162905
JournalApplied Physics Letters
Volume97
Issue number16
DOIs
Publication statusPublished - 18 Oct 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this