Structural and resistance switching properties of ZnO/ SrTiO3/GaAs heterostructure grown by laser molecular beam epitaxy

W. Huang; Jiyan Dai; Jianhua Hao

doi:10.1063/1.3505136

Structural and resistance switching properties of ZnO/ SrTiO₃/GaAs heterostructure grown by laser molecular beam epitaxy

W. Huang, Jiyan Dai, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

22 Citations (Scopus)

Abstract

ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO3(STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric characteristics of the heterostructure have been investigated. The current-voltage characteristic of the heterostructure reveals an asymmetric and resistance switching behavior, exhibiting a temperature-dependent resistance hysteresis in the temperature range of 50-300 K. These measured properties could be attributed to the charge effect at the interface of the heterostructure.

Original language	English
Article number	162905
Journal	Applied Physics Letters
Volume	97
Issue number	16
DOIs	https://doi.org/10.1063/1.3505136
Publication status	Published - 18 Oct 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3505136

http://hdl.handle.net/10397/2507

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abstract = "ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO3(STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric characteristics of the heterostructure have been investigated. The current-voltage characteristic of the heterostructure reveals an asymmetric and resistance switching behavior, exhibiting a temperature-dependent resistance hysteresis in the temperature range of 50-300 K. These measured properties could be attributed to the charge effect at the interface of the heterostructure.",

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AU - Dai, Jiyan

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AB - ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO3(STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric characteristics of the heterostructure have been investigated. The current-voltage characteristic of the heterostructure reveals an asymmetric and resistance switching behavior, exhibiting a temperature-dependent resistance hysteresis in the temperature range of 50-300 K. These measured properties could be attributed to the charge effect at the interface of the heterostructure.

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Structural and resistance switching properties of ZnO/ SrTiO₃/GaAs heterostructure grown by laser molecular beam epitaxy

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