Structural and resistance switching properties of ZnO/ SrTiO3/GaAs heterostructure grown by laser molecular beam epitaxy

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ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO3(STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric characteristics of the heterostructure have been investigated. The current-voltage characteristic of the heterostructure reveals an asymmetric and resistance switching behavior, exhibiting a temperature-dependent resistance hysteresis in the temperature range of 50-300 K. These measured properties could be attributed to the charge effect at the interface of the heterostructure.
Original languageEnglish
Article number162905
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 18 Oct 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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