Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc

X. L. Xu; Shu Ping Lau; B. K. Tay

doi:10.1016/S0040-6090(01)01452-3

Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc

X. L. Xu, Shu Ping Lau, B. K. Tay

Research output: Journal article publication › Conference article › Academic research › peer-review

59 Citations (Scopus)

Abstract

Polycrystalline ZnO films have been deposited by filtered cathodic vacuum arc with various substrate temperatures and bias voltages. The films deposited at room temperature are amorphous. The films grown at 230 and 430°C oriented in the (002) and (103) directions. Strong near-band edge room temperature photoluminescence emission has been observed in the film deposited at 230°C under floating bias. This is attributed to the reduced oxygen vacancies as determined by Raman spectroscopy. The bias voltage and high substrate temperature (up to 430°C) will induce more defects, resulting in broad band tails near the band edge. The optimized ZnO film has a transmittance which is over 80%.

Original language	English
Pages (from-to)	244-249
Number of pages	6
Journal	Thin Solid Films
Volume	398-399
DOIs	https://doi.org/10.1016/S0040-6090(01)01452-3
Publication status	Published - 1 Nov 2001
Externally published	Yes
Event	28th International Conference on Metallurgia - San Diego,CA, United States Duration: 30 Apr 2001 → 30 May 2001

Keywords

Filtered cathodic vacuum arc
X-Ray diffraction
Zinc oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

More information

10.1016/S0040-6090(01)01452-3

Cite this

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title = "Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc",

abstract = "Polycrystalline ZnO films have been deposited by filtered cathodic vacuum arc with various substrate temperatures and bias voltages. The films deposited at room temperature are amorphous. The films grown at 230 and 430°C oriented in the (002) and (103) directions. Strong near-band edge room temperature photoluminescence emission has been observed in the film deposited at 230°C under floating bias. This is attributed to the reduced oxygen vacancies as determined by Raman spectroscopy. The bias voltage and high substrate temperature (up to 430°C) will induce more defects, resulting in broad band tails near the band edge. The optimized ZnO film has a transmittance which is over 80%.",

keywords = "Filtered cathodic vacuum arc, X-Ray diffraction, Zinc oxide",

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year = "2001",

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doi = "10.1016/S0040-6090(01)01452-3",

language = "English",

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T1 - Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc

AU - Xu, X. L.

AU - Lau, Shu Ping

AU - Tay, B. K.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - Polycrystalline ZnO films have been deposited by filtered cathodic vacuum arc with various substrate temperatures and bias voltages. The films deposited at room temperature are amorphous. The films grown at 230 and 430°C oriented in the (002) and (103) directions. Strong near-band edge room temperature photoluminescence emission has been observed in the film deposited at 230°C under floating bias. This is attributed to the reduced oxygen vacancies as determined by Raman spectroscopy. The bias voltage and high substrate temperature (up to 430°C) will induce more defects, resulting in broad band tails near the band edge. The optimized ZnO film has a transmittance which is over 80%.

AB - Polycrystalline ZnO films have been deposited by filtered cathodic vacuum arc with various substrate temperatures and bias voltages. The films deposited at room temperature are amorphous. The films grown at 230 and 430°C oriented in the (002) and (103) directions. Strong near-band edge room temperature photoluminescence emission has been observed in the film deposited at 230°C under floating bias. This is attributed to the reduced oxygen vacancies as determined by Raman spectroscopy. The bias voltage and high substrate temperature (up to 430°C) will induce more defects, resulting in broad band tails near the band edge. The optimized ZnO film has a transmittance which is over 80%.

KW - Filtered cathodic vacuum arc

KW - X-Ray diffraction

KW - Zinc oxide

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U2 - 10.1016/S0040-6090(01)01452-3

DO - 10.1016/S0040-6090(01)01452-3

M3 - Conference article

SN - 0040-6090

VL - 398-399

SP - 244

EP - 249

JO - Thin Solid Films

JF - Thin Solid Films

T2 - 28th International Conference on Metallurgia

Y2 - 30 April 2001 through 30 May 2001

ER -

Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc

Abstract

Keywords

ASJC Scopus subject areas

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