Structural and optical properties of wurtzite InN grown on Si(111)

X. H. Ji, Shu Ping Lau, H. Y. Yang, Q. Y. Zhang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

21 Citations (Scopus)

Abstract

We report the structural and optical properties of InN films on Si(111) prepared by ion-beam-assisted filtered cathodic vacuum arc technique. X-ray diffraction and Raman spectroscopy measurements indicated that all the InN films were hexagonal crystalline InN. The InN films deposited at substrate temperature of 475 °C exhibited highly (0001) preferred orientation and texturing (cratered) surface morphology. The oxygen incorporated in the InN films was segregated in the form of amorphous indium oxide or oxynitride phases at the grain boundaries. Photoluminescence emission of ∼ 1.15 eV was observed at room temperature from the InN films.
Original languageEnglish
Pages (from-to)4619-4623
Number of pages5
JournalThin Solid Films
Volume515
Issue number11
DOIs
Publication statusPublished - 9 Apr 2007
Externally publishedYes

Keywords

  • Indium nitride
  • Ion-beam-assisted filtered cathodic vacuum arc technique
  • Optical properties
  • Structural properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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