Abstract
A filtered cathodic vacuum arc technique has been applied to synthesis iron-nitride thin films on silicon (100) substrate. Two approaches were carried out to introduce the nitrogen gas into the chamber to control the nitrogen content. Films with smooth surface containing α-Fe(N), α′-Fe(N), α″-Fe16N2, γ′-Fe4N, ζ-Fe2N, ε-Fe3N and γξ-FeN phases have been obtained, respectively. The magnetic properties of the films show that small amount of nitrogen addition into the iron films increases the saturation magnetization, while excess nitrogen decreases the saturation magnetization. It is explained based on the bond-band-barrier correlation mechanism [C.Q. Sun, Prog. Mater. Sci. 48 (2003) 521] that the electronegative nitrogen changes the valence states of iron into Fe+or Fe dipoles with higher magnetic momentum compared with an neutral Fe atom in the bulk. All rights resvered.
Original language | English |
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Pages (from-to) | 61-66 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 478 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1 May 2005 |
Externally published | Yes |
Keywords
- FCVA
- Iron nitride thin films
- Magnetic property
- Structure
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry