Structural and electrical transport properties of excimer (Arf)-laser-crystallized silicon carbide

Shu Ping Lau, J. M. Marshall, T. E. Dyer

Research output: Journal article publicationJournal articleAcademic researchpeer-review

22 Citations (Scopus)


The structural and electrical properties of undoped and doped microcrystalline silicon carbide ((μc-SiC) thin films prepared by excimer (ArF) laser crystallization of plasma-enhanced chemical vapour deposited hydrogenated amorphous silicon carbide (a-SiC: H) have been analysed. Using transmission electron microscopy this material is shown to possess partial β-SiC structure. Bonding configurations have also been characterized by infrared spectroscopy. It is shown that a-SiC: H films having a carbon content as large as 30 at.% can be crystallized by this novel method. After crystallization, all films show greater than six orders of magnitude increase in dark conductivity σdc. The temperature dependences of σdcfor undoped, n- and p-type μc-SiC exhibit different characteristic shapes. For all samples, it is shown that the increase in σdcis not predominantly due to the activation of dopant atoms. Instead, the change is associated with the formation of a microcrystalline structure. However, dopant sites, but not carbon content (up to 30 at.%), play an important role in electrical transport in μc-SiC.
Original languageEnglish
Pages (from-to)323-333
Number of pages11
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number3
Publication statusPublished - 1 Jan 1995
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy(all)


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