Structural and dielectric properties of epitaxial SrTiO3 films grown directly on GaAs substrates by laser molecular beam epitaxy

Z. P. Wu, W. Huang, K. H. Wong, Jianhua Hao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

19 Citations (Scopus)


Epitaxial SrTiO3films were grown on GaAs (001) substrates without any buffer layers using laser molecular beam epitaxy technique. The reflection high-energy electron diffraction observations have revealed that a layer-by-layer growth of SrTiO3was achieved at optimized deposition conditions. The crystalline orientation of the as-grown SrTiO3 (001) films rotates 45° in plane with respect to the GaAs substrates. Atomic force microscope studies show that these films possess atomically flat surfaces. The dielectric properties of the heterostructure were also investigated. Our results have clearly demonstrated the practicality of integrating perovskite oxide thin films with GaAs substrates.
Original languageEnglish
Article number054103
JournalJournal of Applied Physics
Issue number5
Publication statusPublished - 22 Sep 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this