Strong compensation hinders the p-type doping of ZnO: A glance over surface defect levels

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Abstract

We propose a surface doping model of ZnO to elucidate the p-type doping and compensations in ZnO nanomaterials. With an N-dopant, the effects of N on the ZnO surface demonstrate a relatively shallow acceptor level in the band gap. As the dimension of the ZnO materials decreases, the quantum confinement effects will increase and render the charge transfer on surface to influence the shifting of Fermi level, by evidence of transition level changes of the N-dopant. We report that this can overwhelm the intrinsic p-type conductivity and transport of the ZnO bulk system. This may provide a possible route of using surface doping to modify the electronic transport and conductivity of ZnO nanomaterials.
Original languageEnglish
Pages (from-to)34-37
Number of pages4
JournalSolid State Communications
Volume237-238
DOIs
Publication statusPublished - 1 Jul 2016

Keywords

  • D: Nitrogen doping
  • E: Surface p-type conduction
  • E: Transition levels

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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