Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing

Bin Chen; Jun Wang; Qiang Gao; Yujie Chen; Xiaozhou Liao; Chunsheng Lu; Hark Hoe Tan; Yiu Wing Mai; Jin Zou; Simon P. Ringer; Huajian Gao; Chennupati Jagadish

doi:10.1021/nl402180k

Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing

Bin Chen, Jun Wang, Qiang Gao, Yujie Chen, Xiaozhou Liao, Chunsheng Lu, Hark Hoe Tan, Yiu Wing Mai, Jin Zou, Simon P. Ringer, Huajian Gao, Chennupati Jagadish

Research output: Journal article publication › Journal article › Academic research › peer-review

45 Citations (Scopus)

Abstract

Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.

Original language	English
Pages (from-to)	4369-4373
Number of pages	5
Journal	Nano Letters
Volume	13
Issue number	9
DOIs	https://doi.org/10.1021/nl402180k
Publication status	Published - 11 Sept 2013
Externally published	Yes

Keywords

GaAs nanowires
in situ deformation
molecular dynamics
stacking fault
strengthening
transmission electron microscopy

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

More information

10.1021/nl402180k

Cite this

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title = "Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing",

abstract = "Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.",

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author = "Bin Chen and Jun Wang and Qiang Gao and Yujie Chen and Xiaozhou Liao and Chunsheng Lu and Tan, {Hark Hoe} and Mai, {Yiu Wing} and Jin Zou and Ringer, {Simon P.} and Huajian Gao and Chennupati Jagadish",

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T1 - Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing

AU - Chen, Bin

AU - Wang, Jun

AU - Gao, Qiang

AU - Chen, Yujie

AU - Liao, Xiaozhou

AU - Lu, Chunsheng

AU - Tan, Hark Hoe

AU - Mai, Yiu Wing

AU - Zou, Jin

AU - Ringer, Simon P.

AU - Gao, Huajian

AU - Jagadish, Chennupati

PY - 2013/9/11

Y1 - 2013/9/11

N2 - Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.

AB - Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ∼5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ∼9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.

KW - GaAs nanowires

KW - in situ deformation

KW - molecular dynamics

KW - stacking fault

KW - strengthening

KW - transmission electron microscopy

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U2 - 10.1021/nl402180k

DO - 10.1021/nl402180k

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SN - 1530-6984

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JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing

Abstract

Keywords

ASJC Scopus subject areas

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