Strain dynamics of ultrathin VO2 film grown on TiO2 (001) and the associated phase transition modulation

L. L. Fan, S. Chen, Z. L. Luo, Q. H. Liu, Y. F. Wu, L. Song, D. X. Ji, P. Wang, W. S. Chu, C. Gao, C. W. Zou, Z. Y. Wu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

234 Citations (Scopus)


Tuning the metal insulator transition (MIT) behavior of VO2 film through the interfacial strain is effective for practical applications. However, the mechanism for strain-modulated MIT is still under debate. Here we directly record the strain dynamics of ultrathin VO2 film on TiO 2 substrate and reveal the intrinsic modulation process by means of synchrotron radiation and first-principles calculations. It is observed that the MIT process of the obtained VO2 films can be modulated continuously via the interfacial strain. The relationship between the phase transition temperature and the strain evolution is established from the initial film growth. From the interfacial strain dynamics and theoretical calculations, we claim that the electronic orbital occupancy is strongly affected by the interfacial strain, which changes also the electron-electron correlation and controls the phase transition temperature. These findings open the possibility of an active tuning of phase transition for the thin VO2 film through the interfacial lattice engineering.

Original languageEnglish
Pages (from-to)4036-4043
Number of pages8
JournalNano Letters
Issue number7
Publication statusPublished - 9 Jul 2014
Externally publishedYes


  • metal insulator transition
  • synchrotron radiation
  • ultrathin films
  • X-ray diffraction

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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