Strain dependent structure and anomalous Hall effect in Pt/Tb3Fe5O12/Ga3Gd5O12 heterostructure grown on Y3Al5O12 substrates

Y. K. Liu; J. M. Liang; H. F. Wong; S. M. Ng; C. L. Mak; C. W. Leung

doi:10.1016/j.jmmm.2021.168130

Strain dependent structure and anomalous Hall effect in Pt/Tb₃Fe₅O₁₂/Ga₃Gd₅O₁₂ heterostructure grown on Y₃Al₅O₁₂ substrates

Y. K. Liu, J. M. Liang, H. F. Wong, S. M. Ng, C. L. Mak, C. W. Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

1 Citation (Scopus)

Abstract

We systematically investigate the strain-dependent microstructure and anomalous Hall effect in Pt/Tb₃Fe₅O₁₂ (TbIG) grown on (1 1 1)-oriented Y₃Al₅O₁₂ (YAG) substrates with different thickness of Ga₃Gd₅O₁₂ (GGG) buffer layer. Structural measurements indicated that the out-of-plane lattice spacing of TbIG layers firstly increased with the rising thickness of GGG (t_G) and then decreased, which was attributed to the impact of the buffer layer on strain relaxation of the epitaxial films. A variation of compensation temperature was found at t_G about 30 nm. Furthermore, both the anomalous Hall resistance and its sign change temperature increased and then kept constant with increasing t_G. Our results indicated that strain played a key role to tune the physical properties of Pt/TbIG/GGG heterostructures, providing a possible approach to tune the spin-orbital coupling in heavy metal/ferromagnetic insulator system by strain engineering.

Original language	English
Article number	168130
Journal	Journal of Magnetism and Magnetic Materials
Volume	536
DOIs	https://doi.org/10.1016/j.jmmm.2021.168130
Publication status	Published - 15 Oct 2021

Keywords

Anomalous Hall effect
Compensation temperature
Strain effect
TbFeO thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

More information

10.1016/j.jmmm.2021.168130

http://hdl.handle.net/10397/94996

Cite this

@article{0308aa085d09428da49af0c3555adfdf,

title = "Strain dependent structure and anomalous Hall effect in Pt/Tb3Fe5O12/Ga3Gd5O12 heterostructure grown on Y3Al5O12 substrates",

abstract = "We systematically investigate the strain-dependent microstructure and anomalous Hall effect in Pt/Tb3Fe5O12 (TbIG) grown on (1 1 1)-oriented Y3Al5O12 (YAG) substrates with different thickness of Ga3Gd5O12 (GGG) buffer layer. Structural measurements indicated that the out-of-plane lattice spacing of TbIG layers firstly increased with the rising thickness of GGG (tG) and then decreased, which was attributed to the impact of the buffer layer on strain relaxation of the epitaxial films. A variation of compensation temperature was found at tG about 30 nm. Furthermore, both the anomalous Hall resistance and its sign change temperature increased and then kept constant with increasing tG. Our results indicated that strain played a key role to tune the physical properties of Pt/TbIG/GGG heterostructures, providing a possible approach to tune the spin-orbital coupling in heavy metal/ferromagnetic insulator system by strain engineering.",

keywords = "Anomalous Hall effect, Compensation temperature, Strain effect, TbFeO thin film",

author = "Liu, {Y. K.} and Liang, {J. M.} and Wong, {H. F.} and Ng, {S. M.} and Mak, {C. L.} and Leung, {C. W.}",

note = "Funding Information: Financial supports from RGC, HKSAR (PolyU 15302320), and PolyU (G-ZVGH, G-ZVQH) are acknowledged. Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = oct,

day = "15",

doi = "10.1016/j.jmmm.2021.168130",

language = "English",

volume = "536",

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issn = "0304-8853",

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T1 - Strain dependent structure and anomalous Hall effect in Pt/Tb3Fe5O12/Ga3Gd5O12 heterostructure grown on Y3Al5O12 substrates

AU - Liu, Y. K.

AU - Liang, J. M.

AU - Wong, H. F.

AU - Ng, S. M.

AU - Mak, C. L.

AU - Leung, C. W.

PY - 2021/10/15

Y1 - 2021/10/15

N2 - We systematically investigate the strain-dependent microstructure and anomalous Hall effect in Pt/Tb3Fe5O12 (TbIG) grown on (1 1 1)-oriented Y3Al5O12 (YAG) substrates with different thickness of Ga3Gd5O12 (GGG) buffer layer. Structural measurements indicated that the out-of-plane lattice spacing of TbIG layers firstly increased with the rising thickness of GGG (tG) and then decreased, which was attributed to the impact of the buffer layer on strain relaxation of the epitaxial films. A variation of compensation temperature was found at tG about 30 nm. Furthermore, both the anomalous Hall resistance and its sign change temperature increased and then kept constant with increasing tG. Our results indicated that strain played a key role to tune the physical properties of Pt/TbIG/GGG heterostructures, providing a possible approach to tune the spin-orbital coupling in heavy metal/ferromagnetic insulator system by strain engineering.

AB - We systematically investigate the strain-dependent microstructure and anomalous Hall effect in Pt/Tb3Fe5O12 (TbIG) grown on (1 1 1)-oriented Y3Al5O12 (YAG) substrates with different thickness of Ga3Gd5O12 (GGG) buffer layer. Structural measurements indicated that the out-of-plane lattice spacing of TbIG layers firstly increased with the rising thickness of GGG (tG) and then decreased, which was attributed to the impact of the buffer layer on strain relaxation of the epitaxial films. A variation of compensation temperature was found at tG about 30 nm. Furthermore, both the anomalous Hall resistance and its sign change temperature increased and then kept constant with increasing tG. Our results indicated that strain played a key role to tune the physical properties of Pt/TbIG/GGG heterostructures, providing a possible approach to tune the spin-orbital coupling in heavy metal/ferromagnetic insulator system by strain engineering.

KW - Anomalous Hall effect

KW - Compensation temperature

KW - Strain effect

KW - TbFeO thin film

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