Strain dependence of lasing mechanisms in ZnO epilayers

H. D. Li, Siu Fung Yu, A. P. Abiyasa, Clement Yuen, Shu Ping Lau, H. Y. Yang, Eunice S.P. Leong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

45 Citations (Scopus)


The lasing characteristics of highly disordered ZnO thin films deposited on Si O2 Si substrates with and without a MgO buffer layer have been investigated. We observed that the emission spectra of the ZnO epilayers with and without a MgO buffer are associated with the radiative recombination of free-exciton (∼380 nm) and electron-hole plasma (∼395 nm), respectively. The difference in the lasing wavelength is due to the induced compressive (tensile) strain along the c axis of the ZnO epilayers as a result of the presence (absence) of the MgO buffer layer. It is demonstrated that the strain-induced variation of Mott density inside the ZnO epilayers is responsible for the observed lasing characteristics.
Original languageEnglish
Article number261111
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 27 Jun 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Strain dependence of lasing mechanisms in ZnO epilayers'. Together they form a unique fingerprint.

Cite this