Abstract
Hfx(Al1-xOythin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at HfxAl1-xOy/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf suicide. The presence of Al in the HfxAl1-xOyfilms was found to be responsible for the Hf suicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality HfxAl1-xOyfilms possessing a reaction-free interface with Si may be obtained by optimizing the growth condition.
| Original language | English |
|---|---|
| Pages (from-to) | 114-117 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 462-463 |
| Issue number | SPEC. ISS. |
| DOIs | |
| Publication status | Published - 1 Sept 2004 |
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This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 3 Good Health and Well-being
Keywords
- Hf Al O x 1-x y
- High-k gate dielectric
- Interfacial structure
- STEM
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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