STEM study of interfacial reaction at HfxAl1-xOy/Si interfaces

Jiyan Dai; K. Li; P. F. Lee; X. Zhao; S. Redkar

doi:10.1016/j.tsf.2004.05.139

STEM study of interfacial reaction at Hf_xAl_1-xO_y/Si interfaces

Jiyan Dai, K. Li, P. F. Lee, X. Zhao, S. Redkar

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

Hfx(Al1-xOythin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at HfxAl1-xOy/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf suicide. The presence of Al in the HfxAl1-xOyfilms was found to be responsible for the Hf suicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality HfxAl1-xOyfilms possessing a reaction-free interface with Si may be obtained by optimizing the growth condition.

Original language	English
Pages (from-to)	114-117
Number of pages	4
Journal	Thin Solid Films
Volume	462-463
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.05.139
Publication status	Published - 1 Sept 2004

Keywords

Hf Al O x 1-x y
High-k gate dielectric
Interfacial structure
STEM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

More information

10.1016/j.tsf.2004.05.139

Cite this

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title = "STEM study of interfacial reaction at HfxAl1-xOy/Si interfaces",

abstract = "Hfx(Al1-xOythin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at HfxAl1-xOy/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf suicide. The presence of Al in the HfxAl1-xOyfilms was found to be responsible for the Hf suicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality HfxAl1-xOyfilms possessing a reaction-free interface with Si may be obtained by optimizing the growth condition.",

keywords = "Hf Al O x 1-x y, High-k gate dielectric, Interfacial structure, STEM",

author = "Jiyan Dai and K. Li and Lee, {P. F.} and X. Zhao and S. Redkar",

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T1 - STEM study of interfacial reaction at HfxAl1-xOy/Si interfaces

AU - Dai, Jiyan

AU - Li, K.

AU - Lee, P. F.

AU - Zhao, X.

AU - Redkar, S.

PY - 2004/9/1

Y1 - 2004/9/1

N2 - Hfx(Al1-xOythin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at HfxAl1-xOy/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf suicide. The presence of Al in the HfxAl1-xOyfilms was found to be responsible for the Hf suicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality HfxAl1-xOyfilms possessing a reaction-free interface with Si may be obtained by optimizing the growth condition.

AB - Hfx(Al1-xOythin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at HfxAl1-xOy/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf suicide. The presence of Al in the HfxAl1-xOyfilms was found to be responsible for the Hf suicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality HfxAl1-xOyfilms possessing a reaction-free interface with Si may be obtained by optimizing the growth condition.

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KW - Interfacial structure

KW - STEM

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