Steep Slope p-type 2D WSe                         
                        2
                                                  Field-Effect Transistors with Van der Waals Contact and Negative Capacitance

Jingli Wang; Xuyun Guo; Zhihao Yu; Zichao Ma; Yanghui Liu; Masun Chan; Ye Zhu; Xinran Wang; Yang Chai

doi:10.1109/IEDM.2018.8614493

Steep Slope p-type 2D WSe ₂ Field-Effect Transistors with Van der Waals Contact and Negative Capacitance

Jingli Wang, Xuyun Guo, Zhihao Yu, Zichao Ma, Yanghui Liu, Masun Chan, Ye Zhu, Xinran Wang, Yang Chai

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

26 Citations (Scopus)

Abstract

Steep-slope p-type 2D WSe ₂ back-gated field-effect transistors (FETs) are realized by using van der Waals Pt-WSe ₂ contact and HfZrO ₂ / Al ₂ O ₃ as the dielectric layer. The van der Waals Pt-WSe ₂ contact is free from disorder and Fermi level pinning and decreases the subthreshold slope. The WSe ₂ NCFET with van der Waals contact shows low subthreshold slope for both forward and reverse gate voltage sweep (the minimum SS forward =18.2 mV dec and SS reverse =44.1 mV dec) with a hysteresis as small as 20 mV at subthreshold region.

Original language	English
Title of host publication	2018 IEEE International Electron Devices Meeting, IEDM 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	22.3.1-22.3.4
ISBN (Electronic)	9781728119878
DOIs	https://doi.org/10.1109/IEDM.2018.8614493
Publication status	Published - 16 Jan 2019
Event	64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States Duration: 1 Dec 2018 → 5 Dec 2018

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2018-December
ISSN (Print)	0163-1918

Conference

Conference	64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/Territory	United States
City	San Francisco
Period	1/12/18 → 5/12/18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

More information

10.1109/IEDM.2018.8614493

http://hdl.handle.net/10397/100315

Cite this

Wang, J., Guo, X., Yu, Z., Ma, Z., Liu, Y., Chan, M., Zhu, Y., Wang, X., & Chai, Y. (2019). Steep Slope p-type 2D WSe ₂ Field-Effect Transistors with Van der Waals Contact and Negative Capacitance. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 22.3.1-22.3.4). Article 8614493 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614493

Wang, Jingli ; Guo, Xuyun ; Yu, Zhihao et al. / Steep Slope p-type 2D WSe ₂ Field-Effect Transistors with Van der Waals Contact and Negative Capacitance. 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 22.3.1-22.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{39dd8f9f6b9448ffba4564d0ef6347f8,

title = "Steep Slope p-type 2D WSe 2 Field-Effect Transistors with Van der Waals Contact and Negative Capacitance",

abstract = " Steep-slope p-type 2D WSe 2 back-gated field-effect transistors (FETs) are realized by using van der Waals Pt-WSe 2 contact and HfZrO 2 / Al 2 O 3 as the dielectric layer. The van der Waals Pt-WSe 2 contact is free from disorder and Fermi level pinning and decreases the subthreshold slope. The WSe 2 NCFET with van der Waals contact shows low subthreshold slope for both forward and reverse gate voltage sweep (the minimum SS forward =18.2 mV dec and SS reverse =44.1 mV dec) with a hysteresis as small as 20 mV at subthreshold region. ",

author = "Jingli Wang and Xuyun Guo and Zhihao Yu and Zichao Ma and Yanghui Liu and Masun Chan and Ye Zhu and Xinran Wang and Yang Chai",

year = "2019",

month = jan,

day = "16",

doi = "10.1109/IEDM.2018.8614493",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "22.3.1--22.3.4",

booktitle = "2018 IEEE International Electron Devices Meeting, IEDM 2018",

note = "64th Annual IEEE International Electron Devices Meeting, IEDM 2018 ; Conference date: 01-12-2018 Through 05-12-2018",

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Wang, J, Guo, X, Yu, Z, Ma, Z, Liu, Y, Chan, M, Zhu, Y, Wang, X & Chai, Y 2019, Steep Slope p-type 2D WSe ₂ Field-Effect Transistors with Van der Waals Contact and Negative Capacitance. in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614493, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 22.3.1-22.3.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 1/12/18. https://doi.org/10.1109/IEDM.2018.8614493

Steep Slope p-type 2D WSe ₂ Field-Effect Transistors with Van der Waals Contact and Negative Capacitance. / Wang, Jingli; Guo, Xuyun; Yu, Zhihao et al.
2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 22.3.1-22.3.4 8614493 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Wang, Jingli

AU - Guo, Xuyun

AU - Yu, Zhihao

AU - Ma, Zichao

AU - Liu, Yanghui

AU - Chan, Masun

AU - Zhu, Ye

AU - Wang, Xinran

AU - Chai, Yang

PY - 2019/1/16

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N2 - Steep-slope p-type 2D WSe 2 back-gated field-effect transistors (FETs) are realized by using van der Waals Pt-WSe 2 contact and HfZrO 2 / Al 2 O 3 as the dielectric layer. The van der Waals Pt-WSe 2 contact is free from disorder and Fermi level pinning and decreases the subthreshold slope. The WSe 2 NCFET with van der Waals contact shows low subthreshold slope for both forward and reverse gate voltage sweep (the minimum SS forward =18.2 mV dec and SS reverse =44.1 mV dec) with a hysteresis as small as 20 mV at subthreshold region.

AB - Steep-slope p-type 2D WSe 2 back-gated field-effect transistors (FETs) are realized by using van der Waals Pt-WSe 2 contact and HfZrO 2 / Al 2 O 3 as the dielectric layer. The van der Waals Pt-WSe 2 contact is free from disorder and Fermi level pinning and decreases the subthreshold slope. The WSe 2 NCFET with van der Waals contact shows low subthreshold slope for both forward and reverse gate voltage sweep (the minimum SS forward =18.2 mV dec and SS reverse =44.1 mV dec) with a hysteresis as small as 20 mV at subthreshold region.

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Wang J, Guo X, Yu Z, Ma Z, Liu Y, Chan M et al. Steep Slope p-type 2D WSe ₂ Field-Effect Transistors with Van der Waals Contact and Negative Capacitance. In 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 22.3.1-22.3.4. 8614493. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2018.8614493