Steep Slope p-type 2D WSe 2 Field-Effect Transistors with Van der Waals Contact and Negative Capacitance

Jingli Wang, Xuyun Guo, Zhihao Yu, Zichao Ma, Yanghui Liu, Masun Chan, Ye Zhu, Xinran Wang, Yang Chai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

3 Citations (Scopus)

Abstract

Steep-slope p-type 2D WSe 2 back-gated field-effect transistors (FETs) are realized by using van der Waals Pt-WSe 2 contact and HfZrO 2 / Al 2 O 3 as the dielectric layer. The van der Waals Pt-WSe 2 contact is free from disorder and Fermi level pinning and decreases the subthreshold slope. The WSe 2 NCFET with van der Waals contact shows low subthreshold slope for both forward and reverse gate voltage sweep (the minimum SS forward =18.2 mV dec and SS reverse =44.1 mV dec) with a hysteresis as small as 20 mV at subthreshold region.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22.3.1-22.3.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 16 Jan 2019
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 1 Dec 20185 Dec 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period1/12/185/12/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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