We have grown (110)-oriented SrTiO3 (STO) thin films on silicon without any buffer layer, by means of pulsed laser deposition technique. The crystal structures of the grown films were examined by X-ray diffraction analysis including θ-2θ scan and rocking curve as well as Laue diffraction methods. STO films with single (110) out-of-plane orientation were formed on all (100), (110) and (111)-oriented Si substrates. The in-plane alignments for the epitaxial STO films grown directly on Si (100) were found as STO//Si and STO[11̄0]//Si. The results should be of interest for better understanding of the growth of perovskite oxide thin films on silicon wafers.
|Number of pages||4|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 1 Nov 2005|
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)