SrTiO3(110) thin films grown directly on different oriented silicon substrates

Jianhua Hao; J. Gao; H. K. Wong

doi:10.1007/s00339-005-3303-4

SrTiO3(110) thin films grown directly on different oriented silicon substrates

Jianhua Hao, J. Gao, H. K. Wong

Research output: Journal article publication › Journal article › Academic research › peer-review

4 Citations (Scopus)

Abstract

We have grown (110)-oriented SrTiO3 (STO) thin films on silicon without any buffer layer, by means of pulsed laser deposition technique. The crystal structures of the grown films were examined by X-ray diffraction analysis including θ-2θ scan and rocking curve as well as Laue diffraction methods. STO films with single (110) out-of-plane orientation were formed on all (100), (110) and (111)-oriented Si substrates. The in-plane alignments for the epitaxial STO films grown directly on Si (100) were found as STO[001]//Si[001] and STO[11̄0]//Si[010]. The results should be of interest for better understanding of the growth of perovskite oxide thin films on silicon wafers.

Original language	English
Pages (from-to)	1233-1236
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	81
Issue number	6
DOIs	https://doi.org/10.1007/s00339-005-3303-4
Publication status	Published - 1 Nov 2005
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Physics and Astronomy (miscellaneous)

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10.1007/s00339-005-3303-4

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abstract = "We have grown (110)-oriented SrTiO3 (STO) thin films on silicon without any buffer layer, by means of pulsed laser deposition technique. The crystal structures of the grown films were examined by X-ray diffraction analysis including θ-2θ scan and rocking curve as well as Laue diffraction methods. STO films with single (110) out-of-plane orientation were formed on all (100), (110) and (111)-oriented Si substrates. The in-plane alignments for the epitaxial STO films grown directly on Si (100) were found as STO[001]//Si[001] and STO[1{\=1}0]//Si[010]. The results should be of interest for better understanding of the growth of perovskite oxide thin films on silicon wafers.",

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N2 - We have grown (110)-oriented SrTiO3 (STO) thin films on silicon without any buffer layer, by means of pulsed laser deposition technique. The crystal structures of the grown films were examined by X-ray diffraction analysis including θ-2θ scan and rocking curve as well as Laue diffraction methods. STO films with single (110) out-of-plane orientation were formed on all (100), (110) and (111)-oriented Si substrates. The in-plane alignments for the epitaxial STO films grown directly on Si (100) were found as STO[001]//Si[001] and STO[11̄0]//Si[010]. The results should be of interest for better understanding of the growth of perovskite oxide thin films on silicon wafers.

AB - We have grown (110)-oriented SrTiO3 (STO) thin films on silicon without any buffer layer, by means of pulsed laser deposition technique. The crystal structures of the grown films were examined by X-ray diffraction analysis including θ-2θ scan and rocking curve as well as Laue diffraction methods. STO films with single (110) out-of-plane orientation were formed on all (100), (110) and (111)-oriented Si substrates. The in-plane alignments for the epitaxial STO films grown directly on Si (100) were found as STO[001]//Si[001] and STO[11̄0]//Si[010]. The results should be of interest for better understanding of the growth of perovskite oxide thin films on silicon wafers.

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SrTiO3(110) thin films grown directly on different oriented silicon substrates

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