SrTiO3(110) thin films grown directly on different oriented silicon substrates

Jianhua Hao, J. Gao, H. K. Wong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)

Abstract

We have grown (110)-oriented SrTiO3 (STO) thin films on silicon without any buffer layer, by means of pulsed laser deposition technique. The crystal structures of the grown films were examined by X-ray diffraction analysis including θ-2θ scan and rocking curve as well as Laue diffraction methods. STO films with single (110) out-of-plane orientation were formed on all (100), (110) and (111)-oriented Si substrates. The in-plane alignments for the epitaxial STO films grown directly on Si (100) were found as STO[001]//Si[001] and STO[11̄0]//Si[010]. The results should be of interest for better understanding of the growth of perovskite oxide thin films on silicon wafers.
Original languageEnglish
Pages (from-to)1233-1236
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume81
Issue number6
DOIs
Publication statusPublished - 1 Nov 2005
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this