Split-drain magnetic field-effect transistor channel charge trapping and stress induced sensitivity deterioration

Zhenyi Yang, Sik Lam Siu, Wing Shan Tam, Chi Wah Kok, Chi Wah Leung, P. T. Lai, Hei Wong, Wing Man Tang, P. W.T. Pong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)


This paper proposed an analytical model on the deterioration of magnetic sensitivity of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). The deterioration is governed by the trap fill rate at the channel boundary traps, which is geometric dependent. Experimental results are presented which show good consistency with the analytical derivation. The deterioration is the most severe at a sector angle of 54.6°, which shows a design tradeoff with sensing hysteresis. Design guidelines for sectorial SD-MAGFET to obtain high sensitivity hysteresis and slow sensitivity deterioration are also presented which provide important information for efficient design.
Original languageEnglish
Article number2279849
JournalIEEE Transactions on Magnetics
Issue number1
Publication statusPublished - 1 Jan 2014


  • Magnetic field-effect transistor (MAGFET)
  • Sectorial
  • Sensitivity
  • Sensitivity deterioration
  • Split-drain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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