Spin-Valve Junction with Transfer-Free MoS2 Spacer Prepared by Sputtering

W. C. Wong; S. M. Ng; H. F. Wong; C. L. Mak; C. W. Leung

doi:10.1109/TMAG.2017.2733004

Spin-Valve Junction with Transfer-Free MoS₂ Spacer Prepared by Sputtering

W. C. Wong, S. M. Ng, H. F. Wong, C. L. Mak, C. W. Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

10 Citations (Scopus)

Abstract

The prospects of spintronic devices based on 2-D materials originate from their outstanding spin-related properties. Fabrication of such devices typically involves transfer processes that yield inferior interfaces due to trapped contaminants or cavities at 2-D material/electrode interfaces. Here, we report a transfer-free fabrication process of MoS₂ films by RF magnetron sputtering, and demonstrate its application in the La_0.7Sr_0.3MnO₃/MoS₂/Ni_0.8Fe_0.2 spin-valve structure. The Raman spectroscopy shows E₂g and A₁g vibration modes of MoS₂, suggesting the growth of crystalline MoS₂ layers. A giant magnetoresistance ratio of 0.8% at 20 K was observed. The results suggest a scalable route for fabricating MoS₂-based electronic and spintronic devices with a transfer-free process for obtaining reliable contacts.

Original language	English
Article number	7995062
Journal	IEEE Transactions on Magnetics
Volume	53
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2017.2733004
Publication status	Published - Nov 2017

Keywords

device fabrication
MoS
spin valve
transfer free

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/TMAG.2017.2733004

http://hdl.handle.net/10397/100380

Cite this

@article{3481aa90973045b3a673f6fdc69189f8,

title = "Spin-Valve Junction with Transfer-Free MoS2 Spacer Prepared by Sputtering",

abstract = "The prospects of spintronic devices based on 2-D materials originate from their outstanding spin-related properties. Fabrication of such devices typically involves transfer processes that yield inferior interfaces due to trapped contaminants or cavities at 2-D material/electrode interfaces. Here, we report a transfer-free fabrication process of MoS2 films by RF magnetron sputtering, and demonstrate its application in the La0.7Sr0.3MnO3/MoS2/Ni0.8Fe0.2 spin-valve structure. The Raman spectroscopy shows E2g and A1g vibration modes of MoS2, suggesting the growth of crystalline MoS2 layers. A giant magnetoresistance ratio of 0.8% at 20 K was observed. The results suggest a scalable route for fabricating MoS2-based electronic and spintronic devices with a transfer-free process for obtaining reliable contacts.",

keywords = "device fabrication, MoS, spin valve, transfer free",

author = "Wong, {W. C.} and Ng, {S. M.} and Wong, {H. F.} and Mak, {C. L.} and Leung, {C. W.}",

year = "2017",

month = nov,

doi = "10.1109/TMAG.2017.2733004",

language = "English",

volume = "53",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "IEEE",

number = "11",

}

TY - JOUR

T1 - Spin-Valve Junction with Transfer-Free MoS2 Spacer Prepared by Sputtering

AU - Wong, W. C.

AU - Ng, S. M.

AU - Wong, H. F.

AU - Mak, C. L.

AU - Leung, C. W.

PY - 2017/11

Y1 - 2017/11

N2 - The prospects of spintronic devices based on 2-D materials originate from their outstanding spin-related properties. Fabrication of such devices typically involves transfer processes that yield inferior interfaces due to trapped contaminants or cavities at 2-D material/electrode interfaces. Here, we report a transfer-free fabrication process of MoS2 films by RF magnetron sputtering, and demonstrate its application in the La0.7Sr0.3MnO3/MoS2/Ni0.8Fe0.2 spin-valve structure. The Raman spectroscopy shows E2g and A1g vibration modes of MoS2, suggesting the growth of crystalline MoS2 layers. A giant magnetoresistance ratio of 0.8% at 20 K was observed. The results suggest a scalable route for fabricating MoS2-based electronic and spintronic devices with a transfer-free process for obtaining reliable contacts.

AB - The prospects of spintronic devices based on 2-D materials originate from their outstanding spin-related properties. Fabrication of such devices typically involves transfer processes that yield inferior interfaces due to trapped contaminants or cavities at 2-D material/electrode interfaces. Here, we report a transfer-free fabrication process of MoS2 films by RF magnetron sputtering, and demonstrate its application in the La0.7Sr0.3MnO3/MoS2/Ni0.8Fe0.2 spin-valve structure. The Raman spectroscopy shows E2g and A1g vibration modes of MoS2, suggesting the growth of crystalline MoS2 layers. A giant magnetoresistance ratio of 0.8% at 20 K was observed. The results suggest a scalable route for fabricating MoS2-based electronic and spintronic devices with a transfer-free process for obtaining reliable contacts.

KW - device fabrication

KW - MoS

KW - spin valve

KW - transfer free

UR - http://www.scopus.com/inward/record.url?scp=85032988683&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2017.2733004

DO - 10.1109/TMAG.2017.2733004

M3 - Journal article

AN - SCOPUS:85032988683

SN - 0018-9464

VL - 53

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 11

M1 - 7995062

ER -