Spin-Valve Junction with Transfer-Free MoS2 Spacer Prepared by Sputtering

W. C. Wong, S. M. Ng, H. F. Wong, C. L. Mak, C. W. Leung

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)

Abstract

The prospects of spintronic devices based on 2-D materials originate from their outstanding spin-related properties. Fabrication of such devices typically involves transfer processes that yield inferior interfaces due to trapped contaminants or cavities at 2-D material/electrode interfaces. Here, we report a transfer-free fabrication process of MoS2 films by RF magnetron sputtering, and demonstrate its application in the La0.7Sr0.3MnO3/MoS2/Ni0.8Fe0.2 spin-valve structure. The Raman spectroscopy shows E2g and A1g vibration modes of MoS2, suggesting the growth of crystalline MoS2 layers. A giant magnetoresistance ratio of 0.8% at 20 K was observed. The results suggest a scalable route for fabricating MoS2-based electronic and spintronic devices with a transfer-free process for obtaining reliable contacts.

Original languageEnglish
Article number7995062
JournalIEEE Transactions on Magnetics
Volume53
Issue number11
DOIs
Publication statusPublished - Nov 2017

Keywords

  • device fabrication
  • MoS
  • spin valve
  • transfer free

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this