Spin-valve junction with transfer-free MoS2 spacer prepared by sputtering

W. Wong; S. Ng; H. Wong; W. Cheng; C. Mak; C. Leung

doi:10.1109/INTMAG.2017.8007578

Spin-valve junction with transfer-free MoS₂ spacer prepared by sputtering

W. Wong, S. Ng, H. Wong, W. Cheng, C. Mak, C. Leung

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

The prospect of spintronic devices based on two-dimensional metal dichalcogenide material (2DMX₂) originate from their long spin life time [1] and 100% out-of-plane spin polarization [2].

Original language	English
Title of host publication	2017 IEEE International Magnetics Conference, INTERMAG 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538610862
DOIs	https://doi.org/10.1109/INTMAG.2017.8007578
Publication status	Published - 10 Aug 2017
Event	2017 IEEE International Magnetics Conference, INTERMAG 2017 - Dublin, Ireland Duration: 24 Apr 2017 → 28 Apr 2017

Publication series

Name	2017 IEEE International Magnetics Conference, INTERMAG 2017

Conference

Conference	2017 IEEE International Magnetics Conference, INTERMAG 2017
Country/Territory	Ireland
City	Dublin
Period	24/04/17 → 28/04/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

More information

10.1109/INTMAG.2017.8007578

Cite this

Wong, W., Ng, S., Wong, H., Cheng, W., Mak, C., & Leung, C. (2017). Spin-valve junction with transfer-free MoS₂ spacer prepared by sputtering. In 2017 IEEE International Magnetics Conference, INTERMAG 2017 Article 8007578 (2017 IEEE International Magnetics Conference, INTERMAG 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2017.8007578

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title = "Spin-valve junction with transfer-free MoS2 spacer prepared by sputtering",

abstract = "The prospect of spintronic devices based on two-dimensional metal dichalcogenide material (2DMX2) originate from their long spin life time [1] and 100% out-of-plane spin polarization [2].",

author = "W. Wong and S. Ng and H. Wong and W. Cheng and C. Mak and C. Leung",

year = "2017",

month = aug,

day = "10",

doi = "10.1109/INTMAG.2017.8007578",

language = "English",

series = "2017 IEEE International Magnetics Conference, INTERMAG 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2017 IEEE International Magnetics Conference, INTERMAG 2017",

note = "2017 IEEE International Magnetics Conference, INTERMAG 2017 ; Conference date: 24-04-2017 Through 28-04-2017",

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Wong, W, Ng, S, Wong, H, Cheng, W, Mak, C & Leung, C 2017, Spin-valve junction with transfer-free MoS₂ spacer prepared by sputtering. in 2017 IEEE International Magnetics Conference, INTERMAG 2017., 8007578, 2017 IEEE International Magnetics Conference, INTERMAG 2017, Institute of Electrical and Electronics Engineers Inc., 2017 IEEE International Magnetics Conference, INTERMAG 2017, Dublin, Ireland, 24/04/17. https://doi.org/10.1109/INTMAG.2017.8007578

Spin-valve junction with transfer-free MoS₂ spacer prepared by sputtering. / Wong, W.; Ng, S.; Wong, H. et al.
2017 IEEE International Magnetics Conference, INTERMAG 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 8007578 (2017 IEEE International Magnetics Conference, INTERMAG 2017).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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