Spin valve josephson junctions

Christopher Bell; Gavin Burnell; Chi Wah Leung; Edward J. Tarte; Mark G. Blamire

doi:10.1109/TASC.2005.850112

Spin valve josephson junctions

Christopher Bell, Gavin Burnell, Chi Wah Leung, Edward J. Tarte, Mark G. Blamire

Research output: Journal article publication › Journal article › Academic research › peer-review

4 Citations (Scopus)

Abstract

We are currently researching Nb-based Josephson junctions with magnetic barriers in which the magnetic character can be actively changed, with the final aim of producing a magnetically controllable π-junction. Pseudo-spin-valve Nb/Fe20Ni80/Cu/Co/Nb Josephson junctions have been grown by d.c. magnetron sputtering. As we have previously reported [1], the spin-valve magnetoresistance could be measured at high bias at 4.2 K. The zero field critical current of the junction could also be varied by preparing the spin valve in different remanent states. Jumps and smooth changes in the critical current were observed, in line with the changes in magnetoresistance. In this work we discuss the effect of varying the total barrier thicknesses on the change in the critical current, as well as varying the Co: Fe20Ni80ratio.

Original language	English
Pages (from-to)	908-911
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	15
Issue number	2 PART I
DOIs	https://doi.org/10.1109/TASC.2005.850112
Publication status	Published - 1 Jun 2005
Externally published	Yes

Keywords

Josephson junctions
Niagnetoresistive devices

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)

More information

10.1109/TASC.2005.850112

Cite this

@article{fcae1c49db9d49f6be43ce5b7276ff7d,

title = "Spin valve josephson junctions",

abstract = "We are currently researching Nb-based Josephson junctions with magnetic barriers in which the magnetic character can be actively changed, with the final aim of producing a magnetically controllable π-junction. Pseudo-spin-valve Nb/Fe20Ni80/Cu/Co/Nb Josephson junctions have been grown by d.c. magnetron sputtering. As we have previously reported [1], the spin-valve magnetoresistance could be measured at high bias at 4.2 K. The zero field critical current of the junction could also be varied by preparing the spin valve in different remanent states. Jumps and smooth changes in the critical current were observed, in line with the changes in magnetoresistance. In this work we discuss the effect of varying the total barrier thicknesses on the change in the critical current, as well as varying the Co: Fe20Ni80ratio.",

keywords = "Josephson junctions, Niagnetoresistive devices",

author = "Christopher Bell and Gavin Burnell and Leung, {Chi Wah} and Tarte, {Edward J.} and Blamire, {Mark G.}",

year = "2005",

month = jun,

day = "1",

doi = "10.1109/TASC.2005.850112",

language = "English",

volume = "15",

pages = "908--911",

journal = "IEEE Transactions on Applied Superconductivity",

issn = "1051-8223",

publisher = "IEEE",

number = "2 PART I",

}

TY - JOUR

T1 - Spin valve josephson junctions

AU - Bell, Christopher

AU - Burnell, Gavin

AU - Leung, Chi Wah

AU - Tarte, Edward J.

AU - Blamire, Mark G.

PY - 2005/6/1

Y1 - 2005/6/1

N2 - We are currently researching Nb-based Josephson junctions with magnetic barriers in which the magnetic character can be actively changed, with the final aim of producing a magnetically controllable π-junction. Pseudo-spin-valve Nb/Fe20Ni80/Cu/Co/Nb Josephson junctions have been grown by d.c. magnetron sputtering. As we have previously reported [1], the spin-valve magnetoresistance could be measured at high bias at 4.2 K. The zero field critical current of the junction could also be varied by preparing the spin valve in different remanent states. Jumps and smooth changes in the critical current were observed, in line with the changes in magnetoresistance. In this work we discuss the effect of varying the total barrier thicknesses on the change in the critical current, as well as varying the Co: Fe20Ni80ratio.

AB - We are currently researching Nb-based Josephson junctions with magnetic barriers in which the magnetic character can be actively changed, with the final aim of producing a magnetically controllable π-junction. Pseudo-spin-valve Nb/Fe20Ni80/Cu/Co/Nb Josephson junctions have been grown by d.c. magnetron sputtering. As we have previously reported [1], the spin-valve magnetoresistance could be measured at high bias at 4.2 K. The zero field critical current of the junction could also be varied by preparing the spin valve in different remanent states. Jumps and smooth changes in the critical current were observed, in line with the changes in magnetoresistance. In this work we discuss the effect of varying the total barrier thicknesses on the change in the critical current, as well as varying the Co: Fe20Ni80ratio.

KW - Josephson junctions

KW - Niagnetoresistive devices

UR - http://www.scopus.com/inward/record.url?scp=22144450269&partnerID=8YFLogxK

U2 - 10.1109/TASC.2005.850112

DO - 10.1109/TASC.2005.850112

M3 - Journal article

VL - 15

SP - 908

EP - 911

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

SN - 1051-8223

IS - 2 PART I

ER -

Spin valve josephson junctions

Abstract

Keywords

ASJC Scopus subject areas

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