Spectroscopic ellipsometry study of epitaxially grown Pb(Mg1/3Nb2/3)O3-PbTiO3MgO/TiN/Si heterostructures

W. S. Tsang; K. Y. Chan; Chee Leung Mak; K. H. Wong

doi:10.1063/1.1603339

Spectroscopic ellipsometry study of epitaxially grown Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃MgO/TiN/Si heterostructures

W. S. Tsang, K. Y. Chan, Chee Leung Mak, K. H. Wong

Research output: Journal article publication › Journal article › Academic research › peer-review

27 Citations (Scopus)

Abstract

A study was conducted on the epitaxial growth of thin films on MgO/TiN buffered Si(001) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscopy techniques were used to study their structural properties and surface morphology. The results showed that these heterostructures form good optical waveguides.

Original language	English
Pages (from-to)	1599-1601
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	8
DOIs	https://doi.org/10.1063/1.1603339
Publication status	Published - 25 Aug 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.1603339

Cite this

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title = "Spectroscopic ellipsometry study of epitaxially grown Pb(Mg1/3Nb2/3)O3-PbTiO3MgO/TiN/Si heterostructures",

abstract = "A study was conducted on the epitaxial growth of thin films on MgO/TiN buffered Si(001) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscopy techniques were used to study their structural properties and surface morphology. The results showed that these heterostructures form good optical waveguides.",

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AU - Wong, K. H.

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AB - A study was conducted on the epitaxial growth of thin films on MgO/TiN buffered Si(001) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscopy techniques were used to study their structural properties and surface morphology. The results showed that these heterostructures form good optical waveguides.

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