Spacerless metal-manganite pseudo-spin-valve structure

W. F. Cheng, A. Ruotolo, Y. K. Chan, K. H. Wong, Chi Wah Leung

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)


We fabricated pseudo-spin-valves by using La0.7Sr0.3MnO3and Co33Fe67as ferromagnetic electrodes. A natural interface layer present between metal and manganite layers eliminated the need of depositing any nonmagnetic spacers. The magnetic layers were decoupled from each other, and the structure exhibited a positive magnetoresistive behavior. Direct comparison between magnetic and transport measurements concluded the occurrence of giant magnetoresistive effect in such a spacerless metal-oxide pseudo-spin-valve structure. The results have implications for a simple route to fabricate oxide-based spintronic devices.
Original languageEnglish
Article number103903
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 9 Jun 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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