TY - JOUR
T1 - Solution processed low power organic field-effect transistor bio-chemical sensor of high transconductance efficiency
AU - Tang, Wei
AU - Fu, Ying
AU - Huang, Yukun
AU - Li, Yuanzhe
AU - Song, Yawen
AU - Xi, Xin
AU - Yu, Yude
AU - Su, Yuezeng
AU - Yan, Feng
AU - Guo, Xiaojun
N1 - Funding Information:
This work was financially supported by the National Natural Science Foundation of China under Grant (61334008, 61804094, and 61974091), National Science Fund for Excellent Young Scholars under Grant 61922057, and the Research Grants Council (RGC) of Hong Kong, China (Project No. C5015-15G).
Publisher Copyright:
© 2022, The Author(s).
PY - 2022/3
Y1 - 2022/3
N2 - Developing organic field-effect transistor (OFET) biosensors for customizable detection of biomarkers for many diseases would provide a low-cost and convenient tool for both biological studies and clinical diagnosis. In this work, design principles of the OFET transducer for biosensors were derived to relate the signal-to-noise ratio (SNR) to the device-performance parameters. Steep subthreshold swing (SS), proper threshold voltage (Vth), good-enough bias-stress stability, and mechanical durability are shown to be the key prerequisites for realizing OFET bio-sensors of high transconductance efficiency (gm/ID) for large SNR. Combining a low trap-density channel and a high-k/low-k gate dielectric layer, low-temperature (<100 °C) solution-processed flexible OFETs can meet the performance requirements to maximize the gm/ID. An extended gate-structure OFET biosensor was further implemented for label-free detection of miR-21, achieving a detection limit below 10 pM with high selectivity at a low operation voltage (<1 V).
AB - Developing organic field-effect transistor (OFET) biosensors for customizable detection of biomarkers for many diseases would provide a low-cost and convenient tool for both biological studies and clinical diagnosis. In this work, design principles of the OFET transducer for biosensors were derived to relate the signal-to-noise ratio (SNR) to the device-performance parameters. Steep subthreshold swing (SS), proper threshold voltage (Vth), good-enough bias-stress stability, and mechanical durability are shown to be the key prerequisites for realizing OFET bio-sensors of high transconductance efficiency (gm/ID) for large SNR. Combining a low trap-density channel and a high-k/low-k gate dielectric layer, low-temperature (<100 °C) solution-processed flexible OFETs can meet the performance requirements to maximize the gm/ID. An extended gate-structure OFET biosensor was further implemented for label-free detection of miR-21, achieving a detection limit below 10 pM with high selectivity at a low operation voltage (<1 V).
UR - http://www.scopus.com/inward/record.url?scp=85126747344&partnerID=8YFLogxK
U2 - 10.1038/s41528-022-00149-9
DO - 10.1038/s41528-022-00149-9
M3 - Journal article
AN - SCOPUS:85126747344
SN - 2397-4621
VL - 6
JO - npj Flexible Electronics
JF - npj Flexible Electronics
IS - 1
M1 - 18
ER -