Solution processable low-voltage organic thin film transistors with high-k relaxor ferroelectric polymer as gate insulator

Jinhua Li, Zhenhua Sun, Feng Yan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

182 Citations (Scopus)

Abstract

A relaxor ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene- chlorofloroethylene) exhibits a high relative dielectric constant (k) (60). The high-k polymer is used successfully in solution processable low-voltage OTFTs as the gate insulator for the first time. Both n-channel and p-channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm2V-1s-1at an operating voltage of 3 V.
Original languageEnglish
Pages (from-to)88-93
Number of pages6
JournalAdvanced Materials
Volume24
Issue number1
DOIs
Publication statusPublished - 3 Jan 2012

Keywords

  • high-k gate dielectrics
  • organic thin film transistors
  • relaxor ferroelectric polymers

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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