Abstract
A relaxor ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene- chlorofloroethylene) exhibits a high relative dielectric constant (k) (60). The high-k polymer is used successfully in solution processable low-voltage OTFTs as the gate insulator for the first time. Both n-channel and p-channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm2V-1s-1at an operating voltage of 3 V.
| Original language | English |
|---|---|
| Pages (from-to) | 88-93 |
| Number of pages | 6 |
| Journal | Advanced Materials |
| Volume | 24 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 3 Jan 2012 |
Keywords
- high-k gate dielectrics
- organic thin film transistors
- relaxor ferroelectric polymers
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering