Solution-processable low-voltage and flexible floating-gate memories based on an n-type polymer semiconductor and high-k polymer gate dielectrics

Jinhua Li, Feng Yan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

39 Citations (Scopus)

Abstract

High-performance low-voltage flash memories based on organic floating-gate field-effect transistors are prepared by a solution process for the first time. Transistors with a high-mobility n-type polymer semiconductor, poly{[N,N′-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2, 6-diyl]-alt-5,5′-(2,2′-bithiophene)}, and a high-k polymer gate dielectric, poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (k ≈ 60), are successfully fabricated on flexible substrates. A thin layer of Au nanoparticles is embedded in the gate dielectric, which can store injected charge from the channel and result in a memory effect. The organic memories demonstrate high carrier mobilities (>0.3 cm2/(V s)), low program/erase voltages (±6 V), little degradation after 105program/erase cycles, and good retention after 105s, which suggest great promise in the application of nonvolatile memories in flexible electronics.
Original languageEnglish
Pages (from-to)12815-12820
Number of pages6
JournalACS Applied Materials and Interfaces
Volume6
Issue number15
DOIs
Publication statusPublished - 13 Aug 2014

Keywords

  • flexible
  • floating-gate memory
  • high-k polymer
  • organic thin-film transistor
  • solution-processable

ASJC Scopus subject areas

  • Materials Science(all)

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