Sol-gel derived lead-free piezoelectric Bi1/2Na1/2TiO3thin film for MEMS applications

Ting Yu; Kin Wing Kwok; Helen Chan

doi:10.1109/ISAF.2006.4349274

Sol-gel derived lead-free piezoelectric Bi_1/2Na_1/2TiO₃thin film for MEMS applications

Ting Yu, Kin Wing Kwok, Helen Chan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

6 Citations (Scopus)

Abstract

Bi1/2Na1/2TiO3(abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature of 650°C. The resulting film is dense and well crystallized in the perovskite phase. The piezoelectric properties of the sol-gel derived BNT films are characterized with the help of a laser interferometer. The BNT based film is expected to be a new and promising candidate for lead-free piezoelectric MEMS applications.

Original language	English
Title of host publication	2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF
DOIs	https://doi.org/10.1109/ISAF.2006.4349274
Publication status	Published - 1 Dec 2006
Event	2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF - Sunset Beach, NC, United States Duration: 30 Jul 2006 → 3 Aug 2006

Conference

Conference	2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF
Country/Territory	United States
City	Sunset Beach, NC
Period	30/07/06 → 3/08/06

Keywords

Lead-free
MEMS
Piezoelectric
Sol-gel
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/ISAF.2006.4349274

Cite this

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title = "Sol-gel derived lead-free piezoelectric Bi1/2Na1/2TiO3thin film for MEMS applications",

abstract = "Bi1/2Na1/2TiO3(abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature of 650°C. The resulting film is dense and well crystallized in the perovskite phase. The piezoelectric properties of the sol-gel derived BNT films are characterized with the help of a laser interferometer. The BNT based film is expected to be a new and promising candidate for lead-free piezoelectric MEMS applications.",

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Yu, T, Kwok, KW & Chan, H 2006, Sol-gel derived lead-free piezoelectric Bi_1/2Na_1/2TiO₃thin film for MEMS applications. in 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF., 4349274, 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF, Sunset Beach, NC, United States, 30/07/06. https://doi.org/10.1109/ISAF.2006.4349274

Sol-gel derived lead-free piezoelectric Bi_1/2Na_1/2TiO₃thin film for MEMS applications. / Yu, Ting; Kwok, Kin Wing; Chan, Helen.
2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF. 2006. 4349274.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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N2 - Bi1/2Na1/2TiO3(abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature of 650°C. The resulting film is dense and well crystallized in the perovskite phase. The piezoelectric properties of the sol-gel derived BNT films are characterized with the help of a laser interferometer. The BNT based film is expected to be a new and promising candidate for lead-free piezoelectric MEMS applications.

AB - Bi1/2Na1/2TiO3(abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature of 650°C. The resulting film is dense and well crystallized in the perovskite phase. The piezoelectric properties of the sol-gel derived BNT films are characterized with the help of a laser interferometer. The BNT based film is expected to be a new and promising candidate for lead-free piezoelectric MEMS applications.

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KW - Piezoelectric

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