SOI thermal impedance extraction methodology and its significance for circuit simulation

Wei Jin, Weidong Liu, Samuel K H Fung, Philip Ching Ho Chan, Chenming Hu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

133 Citations (Scopus)

Abstract

The buried-oxide in SOI MOSFET inhibits heat dissipation in the Si film and leads to increase in transistor temperature. This paper reports a simple and accurate characterization method for the self-heating effect (SHE) in SOI MOSFET. The ac output conductance at a chosen bias point is measured at several frequencies to determine the thermal resistance (Rth)and thermal capacitance (Cth) associated with the SOI device. This methodology is important to remove the misleadingly large self-heating effect from the dc I-V data in device modeling. Not correcting for SHE may lead to significant error in circuit simulation. After SHE is accounted for, the frequency-dependent SHE may be disabled in circuit simulation without sacrificing the accuracy, thus providing faster circuit simulation for high-frequency circuits.
Original languageEnglish
Pages (from-to)730-736
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume48
Issue number4
DOIs
Publication statusPublished - 1 Apr 2001
Externally publishedYes

Keywords

  • Self-heating effect (SHE)
  • SOI MOSFET
  • Thermal impedance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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