Sn-Based Perovskite for Highly Sensitive Photodetectors

Organic–inorganic hybrid perovskites have emerged as promising functional materials for high-performance photodetectors. However, the toxicity of Pb and the lack of internal gain mechanism in typical perovskites significantly hinder their practical applications. Herein, a low-voltage and high-performance photodetector based on a single layer of lead-free Sn-based perovskite film is reported. The device shows broadband response from ultraviolet to near-infrared light with a responsivity up to 10⁵ A W⁻¹ and a high gain at a low operating voltage. The outstanding performance is attributed to the high hole mobility, p-doping nature, and excellent optoelectronic properties of the Sn-based perovskite. Moreover, the device is assembled on a flexible substrate and demonstrates both high sensitivity and good bending stability. This work demonstrates a route for realizing nontoxic, low-cost, and high-performance perovskite photodetectors with a simple device structure.