Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals

Shanming Ke; Haitao Huang; Tao Wang; Huiqing Fan; Waiqi Jie; H. L.W. Chan

doi:10.1063/1.2799259

Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals

Shanming Ke, Haitao Huang, Tao Wang, Huiqing Fan, Waiqi Jie, H. L.W. Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

4 Citations (Scopus)

Abstract

The piezoelectric response in Cd0.9 Zn0.1 Te (CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of 37 s, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in dielectrics.

Original language	English
Article number	162901
Journal	Applied Physics Letters
Volume	91
Issue number	16
DOIs	https://doi.org/10.1063/1.2799259
Publication status	Published - 31 Oct 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2799259

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abstract = "The piezoelectric response in Cd0.9 Zn0.1 Te (CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of 37 s, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in dielectrics.",

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AU - Huang, Haitao

AU - Wang, Tao

AU - Fan, Huiqing

AU - Jie, Waiqi

AU - Chan, H. L.W.

PY - 2007/10/31

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AB - The piezoelectric response in Cd0.9 Zn0.1 Te (CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of 37 s, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in dielectrics.

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Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals

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