Site Occupancy and Near-Infrared Luminescence in Ca3Ga2Ge3O12: Cr3+Persistent Phosphor

Huihong Lin; Gongxun Bai; Ting Yu; Ming Kiu Tsang; Qinyuan Zhang; Jianhua Hao

doi:10.1002/adom.201700227

Site Occupancy and Near-Infrared Luminescence in Ca₃Ga₂Ge₃O₁₂: Cr³⁺Persistent Phosphor

Huihong Lin, Gongxun Bai, Ting Yu, Ming Kiu Tsang, Qinyuan Zhang, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

92 Citations (Scopus)

Abstract

KGaA, Weinheim The near-infrared (NIR) luminescence properties of Cr3+activated Ca3Ga2Ge3O12(CGGG) are studied under ultraviolet and visible light excitation. Three types of Cr3+centers associated with4T2–4A2transition resulting in the emissions located at 650–1100 nm are identified in all Cr3+-doped samples. Thanks to the occupancy of three nonequivalent sites in CGGG, NIR luminescence is observed peaking at about 749, 803, and 907 nm, respectively. The influence of crystal field on site occupancy is studied, the relation between site occupancy and the NIR luminescence is addressed, and the energy transfer process among Cr3+sites and the decay behaviors for Cr3+in different sites are evaluated. It is found that a superior NIR/persistent luminescence comes from the traps that Cr3+enters the Ga3+site. The results are of benefit to investigate Cr3+-activated persistent phosphors.

Original language	English
Article number	1700227
Journal	Advanced Optical Materials
Volume	5
Issue number	18
DOIs	https://doi.org/10.1002/adom.201700227
Publication status	Published - 18 Sep 2017

Keywords

energy transfer
near-infrared luminescence
persistent phosphors
site occupancy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

More information

10.1002/adom.201700227

Cite this

@article{4202d2bfbe014393bfb7a8f613035022,

title = "Site Occupancy and Near-Infrared Luminescence in Ca3Ga2Ge3O12: Cr3+Persistent Phosphor",

abstract = "KGaA, Weinheim The near-infrared (NIR) luminescence properties of Cr3+activated Ca3Ga2Ge3O12(CGGG) are studied under ultraviolet and visible light excitation. Three types of Cr3+centers associated with4T2–4A2transition resulting in the emissions located at 650–1100 nm are identified in all Cr3+-doped samples. Thanks to the occupancy of three nonequivalent sites in CGGG, NIR luminescence is observed peaking at about 749, 803, and 907 nm, respectively. The influence of crystal field on site occupancy is studied, the relation between site occupancy and the NIR luminescence is addressed, and the energy transfer process among Cr3+sites and the decay behaviors for Cr3+in different sites are evaluated. It is found that a superior NIR/persistent luminescence comes from the traps that Cr3+enters the Ga3+site. The results are of benefit to investigate Cr3+-activated persistent phosphors.",

keywords = "energy transfer, near-infrared luminescence, persistent phosphors, site occupancy",

author = "Huihong Lin and Gongxun Bai and Ting Yu and Tsang, {Ming Kiu} and Qinyuan Zhang and Jianhua Hao",

year = "2017",

month = sep,

day = "18",

doi = "10.1002/adom.201700227",

language = "English",

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journal = "Advanced Optical Materials",

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number = "18",

}

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T1 - Site Occupancy and Near-Infrared Luminescence in Ca3Ga2Ge3O12: Cr3+Persistent Phosphor

AU - Lin, Huihong

AU - Bai, Gongxun

AU - Yu, Ting

AU - Tsang, Ming Kiu

AU - Zhang, Qinyuan

AU - Hao, Jianhua

PY - 2017/9/18

Y1 - 2017/9/18

N2 - KGaA, Weinheim The near-infrared (NIR) luminescence properties of Cr3+activated Ca3Ga2Ge3O12(CGGG) are studied under ultraviolet and visible light excitation. Three types of Cr3+centers associated with4T2–4A2transition resulting in the emissions located at 650–1100 nm are identified in all Cr3+-doped samples. Thanks to the occupancy of three nonequivalent sites in CGGG, NIR luminescence is observed peaking at about 749, 803, and 907 nm, respectively. The influence of crystal field on site occupancy is studied, the relation between site occupancy and the NIR luminescence is addressed, and the energy transfer process among Cr3+sites and the decay behaviors for Cr3+in different sites are evaluated. It is found that a superior NIR/persistent luminescence comes from the traps that Cr3+enters the Ga3+site. The results are of benefit to investigate Cr3+-activated persistent phosphors.

AB - KGaA, Weinheim The near-infrared (NIR) luminescence properties of Cr3+activated Ca3Ga2Ge3O12(CGGG) are studied under ultraviolet and visible light excitation. Three types of Cr3+centers associated with4T2–4A2transition resulting in the emissions located at 650–1100 nm are identified in all Cr3+-doped samples. Thanks to the occupancy of three nonequivalent sites in CGGG, NIR luminescence is observed peaking at about 749, 803, and 907 nm, respectively. The influence of crystal field on site occupancy is studied, the relation between site occupancy and the NIR luminescence is addressed, and the energy transfer process among Cr3+sites and the decay behaviors for Cr3+in different sites are evaluated. It is found that a superior NIR/persistent luminescence comes from the traps that Cr3+enters the Ga3+site. The results are of benefit to investigate Cr3+-activated persistent phosphors.

KW - energy transfer

KW - near-infrared luminescence

KW - persistent phosphors

KW - site occupancy

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