Sintering temperature dependence of thermoelectric performance in CuCrSe2prepared via mechanical alloying

Yanci Yan, Lijie Guo, Zhi Zhang, Xu Lu, Kunling Peng, Wei Yao, Jiyan Dai, Guoyu Wang, Xiaoyuan Zhou

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)


CuCrSe2compounds were synthesized by mechanical alloying followed by annealing and spark plasma sintering at temperatures of 873 K, 923 K, 973 K and 1023 K. Our investigation revealed that high SPS temperature (above 973 K) is the key to obtaining CuCrSe2single phase completely free of a metallic secondary phase CuCr2Se4. The ultralow thermal conductivity caused by the Cu ions disorder, complex layered structure and dislocation leads to the favorable thermoelectric performance in CuCrSe2compound. A maximum ZT value over 0.75@873 K is achieved in the absolutely pure sample sintered at 1023 K.
Original languageEnglish
Pages (from-to)127-131
Number of pages5
JournalScripta Materialia
Publication statusPublished - 15 Jan 2017


  • CuCrSe 2
  • Layered structure
  • PLEC
  • Single phase

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this