Single-pole-four-throw switch using high-aspect-ratio lateral switches

A. Q. Liu; W. Palei; M. Tang; A. Alphones

doi:10.1049/el:20045718

Single-pole-four-throw switch using high-aspect-ratio lateral switches

A. Q. Liu, W. Palei, M. Tang, A. Alphones

Research output: Journal article publication › Journal article › Academic research › peer-review

23 Citations (Scopus)

Abstract

A single-pole-four-throw (SP4T) switch using a high-aspect ratio lateral metal-contact micromachined switch is reported. This simplified SP4T micromachined switch is developed using deep reactive ion etching fabrication technology based on silicon-on-insulator wafer. The measurement results of the SP4T switch show an insertion loss of less than 1 dB and isolation of 30 dB from DC to 6 GHz.

Original language	English
Pages (from-to)	1125-1126
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	18
DOIs	https://doi.org/10.1049/el:20045718
Publication status	Published - 2 Sept 2004
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20045718

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abstract = "A single-pole-four-throw (SP4T) switch using a high-aspect ratio lateral metal-contact micromachined switch is reported. This simplified SP4T micromachined switch is developed using deep reactive ion etching fabrication technology based on silicon-on-insulator wafer. The measurement results of the SP4T switch show an insertion loss of less than 1 dB and isolation of 30 dB from DC to 6 GHz.",

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Single-pole-four-throw switch using high-aspect-ratio lateral switches

Abstract

ASJC Scopus subject areas

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