Single mode operation of impurity-induced disordering large area vertical cavity surface emitting lasers

C. W. Lo, Siu Fung Yu

Research output: Journal article publicationConference articleAcademic researchpeer-review

Abstract

Vertical-cavity surface-emitting lasers (VCSELs) with suitable interdiffusion quantum wells profile by the use of selective impurity-induced disordering is proposed for high power single mode operation in large area devices. It is shown that the transverse optical confinement in the quantum well active region formed by the diffusion profile counteracts the influence of carrier spatial hole burning for VCSELs biased at high injection current. Results indicate that a single mode operation can be maintained in VCSELs with the diameter of core region equal to 50 μm.
Original languageEnglish
Pages (from-to)147-152
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume450
Publication statusPublished - 1 Jan 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, United States
Duration: 4 Dec 19965 Dec 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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