Single atomic layer detection of Ca and defect characterization of Bi-2212 with EELS in HA-ADF STEM

Ye Zhu; Marek Niewczas; Martin Couillard; Gianluigi A. Botton

doi:10.1016/j.ultramic.2006.04.022

Single atomic layer detection of Ca and defect characterization of Bi-2212 with EELS in HA-ADF STEM

Ye Zhu, Marek Niewczas, Martin Couillard, Gianluigi A. Botton

Research output: Journal article publication › Journal article › Academic research › peer-review

9 Citations (Scopus)

Abstract

By forming a small electron probe in a scanning transmission electron microscope equipped with a high-angle annular dark-field (HA-ADF) detector, the Bi-O atomic planes in Bi2Sr2CaCu2O8+δ(Bi-2212) can be directly observed with the incoherent Z-contrast imaging technique. Using a combination of electron energy loss spectroscopy (EELS) and HA-ADF imaging, we were able to detect the Ca signals from individual Ca atomic planes in this structure, so that the Ca distribution could be probed within individual unit cells. This high-spatial-resolution EELS technique has been successfully applied to characterize planar defects such as the half-unit cell intergrowth of Bi-2201 on the nanometer scale. Present results show that EELS, in conjunction with high-resolution HA-ADF imaging, provides a powerful tool to study chemical and structural nature of this material on the atomic scale.

Original language	English
Pages (from-to)	1076-1081
Number of pages	6
Journal	Ultramicroscopy
Volume	106
Issue number	11-12 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.ultramic.2006.04.022
Publication status	Published - 1 Oct 2006
Externally published	Yes

Keywords

Bi-2212
EELS
HA-ADF STEM
Z-contrast

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/j.ultramic.2006.04.022

Cite this

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title = "Single atomic layer detection of Ca and defect characterization of Bi-2212 with EELS in HA-ADF STEM",

abstract = "By forming a small electron probe in a scanning transmission electron microscope equipped with a high-angle annular dark-field (HA-ADF) detector, the Bi-O atomic planes in Bi2Sr2CaCu2O8+δ(Bi-2212) can be directly observed with the incoherent Z-contrast imaging technique. Using a combination of electron energy loss spectroscopy (EELS) and HA-ADF imaging, we were able to detect the Ca signals from individual Ca atomic planes in this structure, so that the Ca distribution could be probed within individual unit cells. This high-spatial-resolution EELS technique has been successfully applied to characterize planar defects such as the half-unit cell intergrowth of Bi-2201 on the nanometer scale. Present results show that EELS, in conjunction with high-resolution HA-ADF imaging, provides a powerful tool to study chemical and structural nature of this material on the atomic scale.",

keywords = "Bi-2212, EELS, HA-ADF STEM, Z-contrast",

author = "Ye Zhu and Marek Niewczas and Martin Couillard and Botton, {Gianluigi A.}",

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T1 - Single atomic layer detection of Ca and defect characterization of Bi-2212 with EELS in HA-ADF STEM

AU - Zhu, Ye

AU - Niewczas, Marek

AU - Couillard, Martin

AU - Botton, Gianluigi A.

PY - 2006/10/1

Y1 - 2006/10/1

N2 - By forming a small electron probe in a scanning transmission electron microscope equipped with a high-angle annular dark-field (HA-ADF) detector, the Bi-O atomic planes in Bi2Sr2CaCu2O8+δ(Bi-2212) can be directly observed with the incoherent Z-contrast imaging technique. Using a combination of electron energy loss spectroscopy (EELS) and HA-ADF imaging, we were able to detect the Ca signals from individual Ca atomic planes in this structure, so that the Ca distribution could be probed within individual unit cells. This high-spatial-resolution EELS technique has been successfully applied to characterize planar defects such as the half-unit cell intergrowth of Bi-2201 on the nanometer scale. Present results show that EELS, in conjunction with high-resolution HA-ADF imaging, provides a powerful tool to study chemical and structural nature of this material on the atomic scale.

AB - By forming a small electron probe in a scanning transmission electron microscope equipped with a high-angle annular dark-field (HA-ADF) detector, the Bi-O atomic planes in Bi2Sr2CaCu2O8+δ(Bi-2212) can be directly observed with the incoherent Z-contrast imaging technique. Using a combination of electron energy loss spectroscopy (EELS) and HA-ADF imaging, we were able to detect the Ca signals from individual Ca atomic planes in this structure, so that the Ca distribution could be probed within individual unit cells. This high-spatial-resolution EELS technique has been successfully applied to characterize planar defects such as the half-unit cell intergrowth of Bi-2201 on the nanometer scale. Present results show that EELS, in conjunction with high-resolution HA-ADF imaging, provides a powerful tool to study chemical and structural nature of this material on the atomic scale.

KW - Bi-2212

KW - EELS

KW - HA-ADF STEM

KW - Z-contrast

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U2 - 10.1016/j.ultramic.2006.04.022

DO - 10.1016/j.ultramic.2006.04.022

M3 - Journal article

SN - 0304-3991

VL - 106

SP - 1076

EP - 1081

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 11-12 SPEC. ISS.

ER -

Single atomic layer detection of Ca and defect characterization of Bi-2212 with EELS in HA-ADF STEM

Abstract

Keywords

ASJC Scopus subject areas

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