Simultaneously improving mechanical properties and oxidation resistance of Ti-bearing high-entropy superalloys at intermediate temperature via silicon addition

Shaofei Liu, Weicheng Xiao, Bo Xiao, Jiang Ju, Yinghao Zhou, Yilu Zhao, Zengbao Jiao, Junhua Luan, Qian Li, Jinxiong Hou, Ji jung Kai, Tao Yang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)

Abstract

Ti-bearing high-entropy superalloys (HESAs) often suffer from severe intergranular embrittlement and terrible oxidation degradation at intermediate temperatures. Here we showcase that minor Si addition can effectively mitigate the intergranular embrittlement and improve the oxidation resistance of the a (Ni2Co2FeCr)92Ti4Al4 HESA at 700 °C simultaneously. Experimental analysis revealed that the intergranular G phase induced by 2 at% Si addition can effectively suppress the inward diffusion of oxygen along grain boundaries at 700 °C, thus enhancing the tensile ductility of the alloy from ∼8.3% to ∼13.4%. Besides, the 2 at% Si addition facilitated the formation of a continuous Al2O3 layer during oxidation, contributing to a remarkable reduction in the growth rate of the oxide scale to a quarter of the Si-free HESA. Our results demonstrate that Si can be a favorable alloying element to design advanced HESAs with synergistically improved thermal-mechanical performance.

Original languageEnglish
Pages (from-to)30-41
Number of pages12
JournalJournal of Materials Science and Technology
Volume157
DOIs
Publication statusPublished - 10 Sept 2023

Keywords

  • High-entropy superalloy
  • Intermediate temperature
  • Mechanical property
  • Oxidation behavior
  • Silicon addition

ASJC Scopus subject areas

  • Ceramics and Composites
  • Mechanics of Materials
  • Mechanical Engineering
  • Polymers and Plastics
  • Metals and Alloys
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Simultaneously improving mechanical properties and oxidation resistance of Ti-bearing high-entropy superalloys at intermediate temperature via silicon addition'. Together they form a unique fingerprint.

Cite this