Simulation of twin boundary effect on TFT characteristics

Y. Mo; Feng Yan; P. Migliorato; R. Ishihara

Simulation of twin boundary effect on TFT characteristics

Y. Mo, Feng Yan, P. Migliorato, R. Ishihara

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

The influence of twin boundary on the characteristics of single grain TFT has been analysed by ISE 3-D simulator. It has been found that the orientation and the position of the twin boundary could affect the field effect mobility, the leakage current and the kink effect of the device. The field effect mobility increases with the decrease of the angle between the twin boundary and the channel direction, which is consistent with the experiment results. The twin boundary in contact with the drain leads to higher leakage current because electron-hole generation is enhanced by the trap states in the twin boundary. The simulation indicates that the local electric field near a twin boundary is very high, thus inducing strong impact ionization. The smaller the distance between the twin boundary and the drain the higher the kink effect.

Original language	English
Title of host publication	Proceedings - Electrochemical Society
Pages	130-135
Number of pages	6
Publication status	Published - 20 Dec 2005
Externally published	Yes
Event	Thin Film Transistor Technologies VII - Proceedings of the International Symposium - Honolulu, HI, United States Duration: 4 Oct 2004 → 6 Oct 2004

Conference

Conference	Thin Film Transistor Technologies VII - Proceedings of the International Symposium
Country/Territory	United States
City	Honolulu, HI
Period	4/10/04 → 6/10/04

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{57c3be41462d41e0ab43cdb0f9e9f55f,

title = "Simulation of twin boundary effect on TFT characteristics",

abstract = "The influence of twin boundary on the characteristics of single grain TFT has been analysed by ISE 3-D simulator. It has been found that the orientation and the position of the twin boundary could affect the field effect mobility, the leakage current and the kink effect of the device. The field effect mobility increases with the decrease of the angle between the twin boundary and the channel direction, which is consistent with the experiment results. The twin boundary in contact with the drain leads to higher leakage current because electron-hole generation is enhanced by the trap states in the twin boundary. The simulation indicates that the local electric field near a twin boundary is very high, thus inducing strong impact ionization. The smaller the distance between the twin boundary and the drain the higher the kink effect.",

author = "Y. Mo and Feng Yan and P. Migliorato and R. Ishihara",

year = "2005",

month = dec,

day = "20",

language = "English",

pages = "130--135",

booktitle = "Proceedings - Electrochemical Society",

note = "Thin Film Transistor Technologies VII - Proceedings of the International Symposium ; Conference date: 04-10-2004 Through 06-10-2004",

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TY - GEN

T1 - Simulation of twin boundary effect on TFT characteristics

AU - Mo, Y.

AU - Yan, Feng

AU - Migliorato, P.

AU - Ishihara, R.

PY - 2005/12/20

Y1 - 2005/12/20

N2 - The influence of twin boundary on the characteristics of single grain TFT has been analysed by ISE 3-D simulator. It has been found that the orientation and the position of the twin boundary could affect the field effect mobility, the leakage current and the kink effect of the device. The field effect mobility increases with the decrease of the angle between the twin boundary and the channel direction, which is consistent with the experiment results. The twin boundary in contact with the drain leads to higher leakage current because electron-hole generation is enhanced by the trap states in the twin boundary. The simulation indicates that the local electric field near a twin boundary is very high, thus inducing strong impact ionization. The smaller the distance between the twin boundary and the drain the higher the kink effect.

AB - The influence of twin boundary on the characteristics of single grain TFT has been analysed by ISE 3-D simulator. It has been found that the orientation and the position of the twin boundary could affect the field effect mobility, the leakage current and the kink effect of the device. The field effect mobility increases with the decrease of the angle between the twin boundary and the channel direction, which is consistent with the experiment results. The twin boundary in contact with the drain leads to higher leakage current because electron-hole generation is enhanced by the trap states in the twin boundary. The simulation indicates that the local electric field near a twin boundary is very high, thus inducing strong impact ionization. The smaller the distance between the twin boundary and the drain the higher the kink effect.

UR - http://www.scopus.com/inward/record.url?scp=28944432680&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

SP - 130

EP - 135

BT - Proceedings - Electrochemical Society

T2 - Thin Film Transistor Technologies VII - Proceedings of the International Symposium

Y2 - 4 October 2004 through 6 October 2004

ER -

Simulation of twin boundary effect on TFT characteristics

Abstract

Conference

ASJC Scopus subject areas

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