Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors

Feng Yan, P. Migliorato, R. Ishihara

Research output: Journal article publicationJournal articleAcademic researchpeer-review

2 Citations (Scopus)

Abstract

The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with the increase of the angle between the normal direction of the twin boundary and the channel direction. A single twin boundary in contact with the drain can lead to higher leakage current because electron-hole generation is greatly enhanced by the trap states in the twin boundary.
Original languageEnglish
Article number073509
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
Publication statusPublished - 24 Aug 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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