Simplified thermal modeling for IGBT modules with periodic power loss profiles in modular multilevel converters

  • Yi Zhang
  • , Huai Wang
  • , Zhongxu Wang
  • , Yongheng Yang
  • , Frede Blaabjerg

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

One of the future challenges in modular multilevel converters (MMCs) is how to size key components with compromised costs and design margins, while fulfilling specific reliability targets. It demands better thermal modeling compared to the state-of-the-arts in terms of both accuracy and simplicity. Different from two-level power converters, MMCs have inherent dc-bias in arm currents and the power device conduction time is affected by operational parameters. A time-wise thermal modeling for the power devices in MMCs is, therefore, an iteration process and time-consuming. This paper, thus, proposes a simple analytical thermal modeling method, which adopts equivalent periodic power loss profiles. More importantly, time-domain simulations are not required in the proposed method. Benchmarking of the proposed methods with the prior-art solutions is performed in terms of parameter sensitivity and model accuracy with a case study on a 30-MW MMC system. Experiments are carried out on a specifically designed scaled-down system to verify the electrothermal aspects.

Original languageEnglish
Article number8331948
Pages (from-to)2323-2332
Number of pages10
JournalIEEE Transactions on Industrial Electronics
Volume66
Issue number3
DOIs
Publication statusPublished - Mar 2019

Keywords

  • Insulated gate bipolar transistor (IGBT)
  • modular multilevel converter (MMC)
  • power semiconductor
  • reliability
  • thermal design
  • thermal stress estimation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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