Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric

Xiao Huo, Kevin J. Chen, Philip Ching Ho Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

75 Citations (Scopus)


We have fabricated high-Q copper inductors using low-K benzocyclobutene (BCB) dielectric as an interface layer on standard CMOS silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. The inductors exhibit Q-factors as high as 25 at 2 GHz. The dependence of inductor's high-frequency performance on inductor's parameters, such as BCB and copper thickness, has been investigated in detail. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFICs and MMICs.
Original languageEnglish
Pages (from-to)520-522
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 1 Sept 2002
Externally publishedYes


  • Benzocyclobutene (BCB)
  • CMOS
  • Electroplated copper
  • High-Q inductor
  • Silicon substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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