TY - GEN
T1 - SiC trench IGBT with diode-clamped p-shield for oxide protection and enhanced conductivity modulation
AU - Wei, Jin
AU - Zhang, Meng
AU - Jiang, Huaping
AU - To, Suet
AU - Kim, Sunghan
AU - Kim, Jun Youn
AU - Chen, Kevin J.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/6/22
Y1 - 2018/6/22
N2 - In this paper, a diode-clamped p-shield is proposed as a feasible approach for SiC trench IGBT. The introduction of the p-shield effectively suppresses the high electric field in the gate oxide around the trench corner, which is a notorious feature for SiC trench gate devices. Additionally, the p-shield also results in a reduced Crss and thus better switching characteristics. The traditional grounded p-shield (widely adopted in SiC trench MOSFETs), however, significantly reduces the electron/hole density near the emitter side of the SiC trench IGBT. The diode-clamped p-shield structure proposed in this paper successfully solves this issue, since the potential of the p-shield in the on-state is elevated to near the turn-on voltage of the diode, and thus the extraction of holes from the p-shield is suppressed. Therefore, the proposed SiC trench IGBT with a diode-clamped p-shield reduces the high oxide field, improves the switching characteristics and maintains a low Kon simultaneously.
AB - In this paper, a diode-clamped p-shield is proposed as a feasible approach for SiC trench IGBT. The introduction of the p-shield effectively suppresses the high electric field in the gate oxide around the trench corner, which is a notorious feature for SiC trench gate devices. Additionally, the p-shield also results in a reduced Crss and thus better switching characteristics. The traditional grounded p-shield (widely adopted in SiC trench MOSFETs), however, significantly reduces the electron/hole density near the emitter side of the SiC trench IGBT. The diode-clamped p-shield structure proposed in this paper successfully solves this issue, since the potential of the p-shield in the on-state is elevated to near the turn-on voltage of the diode, and thus the extraction of holes from the p-shield is suppressed. Therefore, the proposed SiC trench IGBT with a diode-clamped p-shield reduces the high oxide field, improves the switching characteristics and maintains a low Kon simultaneously.
KW - conductivity modulation
KW - diode-clamped
KW - gate oxide field
KW - p-shield
KW - SiC trench IGBT
KW - switching characteristics
UR - http://www.scopus.com/inward/record.url?scp=85049933781&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2018.8393690
DO - 10.1109/ISPSD.2018.8393690
M3 - Conference article published in proceeding or book
AN - SCOPUS:85049933781
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 411
EP - 414
BT - 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
Y2 - 13 May 2018 through 17 May 2018
ER -