SiC trench IGBT with diode-clamped p-shield for oxide protection and enhanced conductivity modulation

Jin Wei, Meng Zhang, Huaping Jiang, Suet To, Sunghan Kim, Jun Youn Kim, Kevin J. Chen

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

6 Citations (Scopus)

Abstract

In this paper, a diode-clamped p-shield is proposed as a feasible approach for SiC trench IGBT. The introduction of the p-shield effectively suppresses the high electric field in the gate oxide around the trench corner, which is a notorious feature for SiC trench gate devices. Additionally, the p-shield also results in a reduced Crss and thus better switching characteristics. The traditional grounded p-shield (widely adopted in SiC trench MOSFETs), however, significantly reduces the electron/hole density near the emitter side of the SiC trench IGBT. The diode-clamped p-shield structure proposed in this paper successfully solves this issue, since the potential of the p-shield in the on-state is elevated to near the turn-on voltage of the diode, and thus the extraction of holes from the p-shield is suppressed. Therefore, the proposed SiC trench IGBT with a diode-clamped p-shield reduces the high oxide field, improves the switching characteristics and maintains a low Kon simultaneously.

Original languageEnglish
Title of host publication2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages411-414
Number of pages4
ISBN (Electronic)9781538629260
DOIs
Publication statusPublished - 22 Jun 2018
Event30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018 - Chicago, United States
Duration: 13 May 201817 May 2018

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2018-May
ISSN (Print)1063-6854

Conference

Conference30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
Country/TerritoryUnited States
CityChicago
Period13/05/1817/05/18

Keywords

  • conductivity modulation
  • diode-clamped
  • gate oxide field
  • p-shield
  • SiC trench IGBT
  • switching characteristics

ASJC Scopus subject areas

  • Engineering(all)

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