Si-Based light-emitting structure synthesized with low-energy ion implantation at a low dosage

Y. Liu, T. P. Chen, Siu Fung Yu, Z. X. Li, L. Ding, M. Yang, J. I. Wong, C. Y. Ng, C. Yuen

Research output: Journal article publicationJournal articleAcademic researchpeer-review


In this work, Si-based light-emitting structures were synthesized by Si+ implantation into 30 nm thermally grown SiO2films with a low dosage (≤1 × 1016/cm2). The emission band of electroluminescence (EL) extends from 300 nm to 700 nm with a peak at around 500 nm. The onset voltage for the EL is around 5 V for the 8 keV implanted sample which is low enough for many device applications. The light emission mechanism is studied in this work. It is believed that the defects in the Si+ implanted SiO2films are the luminescent centers responsible for the EL. In addition, it is found the light emission intensity can be affected by charge trapping in nc-Si.
Original languageEnglish
Pages (from-to)595-598
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number1
Publication statusPublished - 1 Jan 2010
Externally publishedYes


  • Ion Implantation
  • Light Emission
  • Si Nanocrystal

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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