Si-Based light-emitting structure synthesized with low-energy ion implantation at a low dosage

Y. Liu; T. P. Chen; Siu Fung Yu; Z. X. Li; L. Ding; M. Yang; J. I. Wong; C. Y. Ng; C. Yuen

doi:10.1166/jnn.2010.1589

Si-Based light-emitting structure synthesized with low-energy ion implantation at a low dosage

Y. Liu, T. P. Chen, Siu Fung Yu, Z. X. Li, L. Ding, M. Yang, J. I. Wong, C. Y. Ng, C. Yuen

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

In this work, Si-based light-emitting structures were synthesized by Si+ implantation into 30 nm thermally grown SiO2films with a low dosage (≤1 × 1016/cm2). The emission band of electroluminescence (EL) extends from 300 nm to 700 nm with a peak at around 500 nm. The onset voltage for the EL is around 5 V for the 8 keV implanted sample which is low enough for many device applications. The light emission mechanism is studied in this work. It is believed that the defects in the Si+ implanted SiO2films are the luminescent centers responsible for the EL. In addition, it is found the light emission intensity can be affected by charge trapping in nc-Si.

Original language	English
Pages (from-to)	595-598
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	10
Issue number	1
DOIs	https://doi.org/10.1166/jnn.2010.1589
Publication status	Published - 1 Jan 2010
Externally published	Yes

Keywords

Ion Implantation
Light Emission
Si Nanocrystal

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1166/jnn.2010.1589

Cite this

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abstract = "In this work, Si-based light-emitting structures were synthesized by Si+ implantation into 30 nm thermally grown SiO2films with a low dosage (≤1 × 1016/cm2). The emission band of electroluminescence (EL) extends from 300 nm to 700 nm with a peak at around 500 nm. The onset voltage for the EL is around 5 V for the 8 keV implanted sample which is low enough for many device applications. The light emission mechanism is studied in this work. It is believed that the defects in the Si+ implanted SiO2films are the luminescent centers responsible for the EL. In addition, it is found the light emission intensity can be affected by charge trapping in nc-Si.",

keywords = "Ion Implantation, Light Emission, Si Nanocrystal",

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TY - JOUR

T1 - Si-Based light-emitting structure synthesized with low-energy ion implantation at a low dosage

AU - Liu, Y.

AU - Chen, T. P.

AU - Yu, Siu Fung

AU - Li, Z. X.

AU - Ding, L.

AU - Yang, M.

AU - Wong, J. I.

AU - Ng, C. Y.

AU - Yuen, C.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - In this work, Si-based light-emitting structures were synthesized by Si+ implantation into 30 nm thermally grown SiO2films with a low dosage (≤1 × 1016/cm2). The emission band of electroluminescence (EL) extends from 300 nm to 700 nm with a peak at around 500 nm. The onset voltage for the EL is around 5 V for the 8 keV implanted sample which is low enough for many device applications. The light emission mechanism is studied in this work. It is believed that the defects in the Si+ implanted SiO2films are the luminescent centers responsible for the EL. In addition, it is found the light emission intensity can be affected by charge trapping in nc-Si.

AB - In this work, Si-based light-emitting structures were synthesized by Si+ implantation into 30 nm thermally grown SiO2films with a low dosage (≤1 × 1016/cm2). The emission band of electroluminescence (EL) extends from 300 nm to 700 nm with a peak at around 500 nm. The onset voltage for the EL is around 5 V for the 8 keV implanted sample which is low enough for many device applications. The light emission mechanism is studied in this work. It is believed that the defects in the Si+ implanted SiO2films are the luminescent centers responsible for the EL. In addition, it is found the light emission intensity can be affected by charge trapping in nc-Si.

KW - Ion Implantation

KW - Light Emission

KW - Si Nanocrystal

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U2 - 10.1166/jnn.2010.1589

DO - 10.1166/jnn.2010.1589

M3 - Journal article

SN - 1533-4880

VL - 10

SP - 595

EP - 598

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 1

ER -

Si-Based light-emitting structure synthesized with low-energy ion implantation at a low dosage

Abstract

Keywords

ASJC Scopus subject areas

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