Abstract
Floatingbody partially depleted (PD) SOI MOSFET's exhibit excess lowfrequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and bodysource diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through the floatingbody effect (FBE). A physicallybased noise model is proposed which predicts that the excess lowfrequency noise shows a Lorentzianlike spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the characteristic frequency in noise spectrum and ac output impedance of the device.
| Original language | English |
|---|---|
| Pages (from-to) | 11801185 |
| Number of pages | 1 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 46 |
| Issue number | 6 |
| Publication status | Published - 1 Dec 1999 |
| Externally published | Yes |
Keywords
- Excess lowfrequency noise
- Floatingbody effect
- Partially depleted SOI MOSFET's
- Shot noise
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering