Shotnoiseinduced excess lowfrequency noise in floatingbody partially depleted soi mosfet's

Wei Jin, Philip Ching Ho Chan, Samuel K.H. Fung, Ping K. Ko

Research output: Journal article publicationJournal articleAcademic researchpeer-review

9 Citations (Scopus)


Floatingbody partially depleted (PD) SOI MOSFET's exhibit excess lowfrequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and bodysource diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through the floatingbody effect (FBE). A physicallybased noise model is proposed which predicts that the excess lowfrequency noise shows a Lorentzianlike spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the characteristic frequency in noise spectrum and ac output impedance of the device.
Original languageEnglish
Pages (from-to)11801185
Number of pages1
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 1 Dec 1999
Externally publishedYes


  • Excess lowfrequency noise
  • Floatingbody effect
  • Partially depleted SOI MOSFET's
  • Shot noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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