Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's

Wei Jin, Philip Ching Ho Chan, Samuel K H Fung, Ping K. Ko

Research output: Journal article publicationJournal articleAcademic researchpeer-review

43 Citations (Scopus)


Floating-body partially depleted (PD) SOI MOSFET's exhibit excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through the floating-body effect (FBE). A physically-based noise model is proposed which predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the characteristic frequency in noise spectrum and ac output impedance of the device.
Original languageEnglish
Pages (from-to)1180-1185
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 1 Jan 1999
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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