Floating-body partially depleted (PD) SOI MOSFET's exhibit excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through the floating-body effect (FBE). A physically-based noise model is proposed which predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the characteristic frequency in noise spectrum and ac output impedance of the device.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering