Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's

Wei Jin; Philip Ching Ho Chan; Samuel K H Fung; Ping K. Ko

doi:10.1109/16.766881

Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's

Wei Jin, Philip Ching Ho Chan, Samuel K H Fung, Ping K. Ko

Research output: Journal article publication › Journal article › Academic research › peer-review

43 Citations (Scopus)

Abstract

Floating-body partially depleted (PD) SOI MOSFET's exhibit excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through the floating-body effect (FBE). A physically-based noise model is proposed which predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the characteristic frequency in noise spectrum and ac output impedance of the device.

Original language	English
Pages (from-to)	1180-1185
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	6
DOIs	https://doi.org/10.1109/16.766881
Publication status	Published - 1 Jan 1999
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.766881

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abstract = "Floating-body partially depleted (PD) SOI MOSFET's exhibit excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through the floating-body effect (FBE). A physically-based noise model is proposed which predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the characteristic frequency in noise spectrum and ac output impedance of the device.",

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Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFET's

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