Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror

S. P. Ng; D. Y. Tang; A. Q. Liu; L. J. Qin; X. L. Meng

doi:10.1016/j.optcom.2005.08.056

Short pulse passively Q-switched Nd:GdYVO₄ laser using a GaAs mirror

S. P. Ng, D. Y. Tang, A. Q. Liu, L. J. Qin, X. L. Meng

Research output: Journal article publication › Journal article › Academic research › peer-review

37 Citations (Scopus)

Abstract

We report on a diode pumped passively Q-switched Nd:Gd_0.64Y _0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.

Original language	English
Pages (from-to)	256-260
Number of pages	5
Journal	Optics Communications
Volume	259
Issue number	1
DOIs	https://doi.org/10.1016/j.optcom.2005.08.056
Publication status	Published - 1 Mar 2006
Externally published	Yes

Keywords

Diode-pumped lasers
Passive Q-switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

More information

10.1016/j.optcom.2005.08.056

Cite this

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title = "Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror",

abstract = "We report on a diode pumped passively Q-switched Nd:Gd0.64Y 0.36VO4 laser with a Cr4+:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.",

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AU - Ng, S. P.

AU - Tang, D. Y.

AU - Liu, A. Q.

AU - Qin, L. J.

AU - Meng, X. L.

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AB - We report on a diode pumped passively Q-switched Nd:Gd0.64Y 0.36VO4 laser with a Cr4+:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.

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