Sensitive, selective and stable tin dioxide thin-films for carbon monoxide and hydrogen sensing in integrated gas sensor array applications

Rajnish K. Sharma; Philip Ching Ho Chan; Zhenan Tang; G. Yan; I. Ming Hsing; Johnny K.O. Sin

doi:10.1016/S0925-4005(00)00646-8

Sensitive, selective and stable tin dioxide thin-films for carbon monoxide and hydrogen sensing in integrated gas sensor array applications

Rajnish K. Sharma, Philip Ching Ho Chan, Zhenan Tang, G. Yan, I. Ming Hsing, Johnny K.O. Sin

Research output: Journal article publication › Journal article › Academic research › peer-review

88 Citations (Scopus)

Abstract

This paper reports on the preparation, electrical and surface characterization of Cu doped tin dioxide thin-films for highly selective integrated gas sensor devices. The 3000 angstroms thin-film of 0.16 wt.% copper doped tin dioxide was deposited by reactive R.F. sputtering at room temperature and followed by 10 angstroms Pt on top of Cu doped tin dioxide thin-film (SnO2-Cu/Pt). In another batch, the 100 angstroms SiO2thin-film was deposited on top of the SnO2-Cu/Pt thin-film structure (SnO2-Cu/Pt/SiO2). The electrical response of these thin-films was investigated for CO and H2gases at different temperatures and gas concentrations. The device with the SnO2-Cu/Pt thin-film, showed excellent electrical response towards CO gas and device with SnO2-Cu/Pt/SiO2thin-film showed response towards hydrogen only. The SiO2thin-film prevents the diffusion of CO gas and only hydrogen gas diffuse through silicon dioxide layer. Using thin-films structure SnO2-Cu/Pt and SnO2-Cu/Pt/SiO2, a highly selective sensor device for CO and H2gas was fabricated. The surface characterization of these thin-films was performed using scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) techniques. The SEM picture showed that surface structure of the SnO2thin-film improved by copper doping.

Original language	English
Pages (from-to)	160-166
Number of pages	7
Journal	Sensors and Actuators, B: Chemical
Volume	72
Issue number	2
DOIs	https://doi.org/10.1016/S0925-4005(00)00646-8
Publication status	Published - 25 Jan 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0925-4005(00)00646-8

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title = "Sensitive, selective and stable tin dioxide thin-films for carbon monoxide and hydrogen sensing in integrated gas sensor array applications",

abstract = "This paper reports on the preparation, electrical and surface characterization of Cu doped tin dioxide thin-films for highly selective integrated gas sensor devices. The 3000 angstroms thin-film of 0.16 wt.% copper doped tin dioxide was deposited by reactive R.F. sputtering at room temperature and followed by 10 angstroms Pt on top of Cu doped tin dioxide thin-film (SnO2-Cu/Pt). In another batch, the 100 angstroms SiO2thin-film was deposited on top of the SnO2-Cu/Pt thin-film structure (SnO2-Cu/Pt/SiO2). The electrical response of these thin-films was investigated for CO and H2gases at different temperatures and gas concentrations. The device with the SnO2-Cu/Pt thin-film, showed excellent electrical response towards CO gas and device with SnO2-Cu/Pt/SiO2thin-film showed response towards hydrogen only. The SiO2thin-film prevents the diffusion of CO gas and only hydrogen gas diffuse through silicon dioxide layer. Using thin-films structure SnO2-Cu/Pt and SnO2-Cu/Pt/SiO2, a highly selective sensor device for CO and H2gas was fabricated. The surface characterization of these thin-films was performed using scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) techniques. The SEM picture showed that surface structure of the SnO2thin-film improved by copper doping.",

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Sensitive, selective and stable tin dioxide thin-films for carbon monoxide and hydrogen sensing in integrated gas sensor array applications. / Sharma, Rajnish K.; Chan, Philip Ching Ho; Tang, Zhenan et al.
In: Sensors and Actuators, B: Chemical, Vol. 72, No. 2, 25.01.2001, p. 160-166.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - Sensitive, selective and stable tin dioxide thin-films for carbon monoxide and hydrogen sensing in integrated gas sensor array applications

AU - Sharma, Rajnish K.

AU - Chan, Philip Ching Ho

AU - Tang, Zhenan

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AU - Hsing, I. Ming

AU - Sin, Johnny K.O.

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N2 - This paper reports on the preparation, electrical and surface characterization of Cu doped tin dioxide thin-films for highly selective integrated gas sensor devices. The 3000 angstroms thin-film of 0.16 wt.% copper doped tin dioxide was deposited by reactive R.F. sputtering at room temperature and followed by 10 angstroms Pt on top of Cu doped tin dioxide thin-film (SnO2-Cu/Pt). In another batch, the 100 angstroms SiO2thin-film was deposited on top of the SnO2-Cu/Pt thin-film structure (SnO2-Cu/Pt/SiO2). The electrical response of these thin-films was investigated for CO and H2gases at different temperatures and gas concentrations. The device with the SnO2-Cu/Pt thin-film, showed excellent electrical response towards CO gas and device with SnO2-Cu/Pt/SiO2thin-film showed response towards hydrogen only. The SiO2thin-film prevents the diffusion of CO gas and only hydrogen gas diffuse through silicon dioxide layer. Using thin-films structure SnO2-Cu/Pt and SnO2-Cu/Pt/SiO2, a highly selective sensor device for CO and H2gas was fabricated. The surface characterization of these thin-films was performed using scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) techniques. The SEM picture showed that surface structure of the SnO2thin-film improved by copper doping.

AB - This paper reports on the preparation, electrical and surface characterization of Cu doped tin dioxide thin-films for highly selective integrated gas sensor devices. The 3000 angstroms thin-film of 0.16 wt.% copper doped tin dioxide was deposited by reactive R.F. sputtering at room temperature and followed by 10 angstroms Pt on top of Cu doped tin dioxide thin-film (SnO2-Cu/Pt). In another batch, the 100 angstroms SiO2thin-film was deposited on top of the SnO2-Cu/Pt thin-film structure (SnO2-Cu/Pt/SiO2). The electrical response of these thin-films was investigated for CO and H2gases at different temperatures and gas concentrations. The device with the SnO2-Cu/Pt thin-film, showed excellent electrical response towards CO gas and device with SnO2-Cu/Pt/SiO2thin-film showed response towards hydrogen only. The SiO2thin-film prevents the diffusion of CO gas and only hydrogen gas diffuse through silicon dioxide layer. Using thin-films structure SnO2-Cu/Pt and SnO2-Cu/Pt/SiO2, a highly selective sensor device for CO and H2gas was fabricated. The surface characterization of these thin-films was performed using scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) techniques. The SEM picture showed that surface structure of the SnO2thin-film improved by copper doping.

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JO - Sensors and Actuators, B: Chemical

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IS - 2

ER -

Sensitive, selective and stable tin dioxide thin-films for carbon monoxide and hydrogen sensing in integrated gas sensor array applications

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