Sensing characteristics of a novel NH3-nitrided schottky-diode hydrogen sensor

Wing Man Tang; P. T. Lai; J. P. Xu; C. L. Chan

doi:10.1109/ISIE.2004.1571779

Sensing characteristics of a novel NH₃-nitrided schottky-diode hydrogen sensor

Wing Man Tang, P. T. Lai, J. P. Xu, C. L. Chan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

A novel NHi-nitrided Schottky-diode hydrogen sensor has been successfully fabricated Measurements have been performed to investigate the sensitivity, stability and response speed of the sensor at different temperatures and hydrogen concentrations. It can respond to hydrogen variation very quickly and can give significant response ewn at low hydrogen concentration. The studied device exhibits high sensitivity of 350 % at 300 °C when 800 ppm IJ in N2 gas is introduced. The sensitivity is 15 times greater than that of the Pt-SiC sensor. The excellent hydrogen-sensing characteristics of this novel sensor make it very suitable for detecting hydrogen leakage in high-temperature environment. The effects of hydrogen adsorption on the barrier height and hydrogen reaction kinetics are also investigated.

Original language	English
Title of host publication	IEEE International Symposium on Industrial Electronics
Pages	43-47
Number of pages	5
DOIs	https://doi.org/10.1109/ISIE.2004.1571779
Publication status	Published - 1 Dec 2004
Externally published	Yes
Event	2004 IEEE International Symposium on Industrial Electronics, IEEE-ISlE - Duration: 4 May 2004 → 7 May 2004

Conference

Conference	2004 IEEE International Symposium on Industrial Electronics, IEEE-ISlE
Period	4/05/04 → 7/05/04

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering

More information

10.1109/ISIE.2004.1571779

Cite this

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title = "Sensing characteristics of a novel NH3-nitrided schottky-diode hydrogen sensor",

abstract = "A novel NHi-nitrided Schottky-diode hydrogen sensor has been successfully fabricated Measurements have been performed to investigate the sensitivity, stability and response speed of the sensor at different temperatures and hydrogen concentrations. It can respond to hydrogen variation very quickly and can give significant response ewn at low hydrogen concentration. The studied device exhibits high sensitivity of 350 % at 300 °C when 800 ppm IJ in N2 gas is introduced. The sensitivity is 15 times greater than that of the Pt-SiC sensor. The excellent hydrogen-sensing characteristics of this novel sensor make it very suitable for detecting hydrogen leakage in high-temperature environment. The effects of hydrogen adsorption on the barrier height and hydrogen reaction kinetics are also investigated.",

author = "Tang, {Wing Man} and Lai, {P. T.} and Xu, {J. P.} and Chan, {C. L.}",

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doi = "10.1109/ISIE.2004.1571779",

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AB - A novel NHi-nitrided Schottky-diode hydrogen sensor has been successfully fabricated Measurements have been performed to investigate the sensitivity, stability and response speed of the sensor at different temperatures and hydrogen concentrations. It can respond to hydrogen variation very quickly and can give significant response ewn at low hydrogen concentration. The studied device exhibits high sensitivity of 350 % at 300 °C when 800 ppm IJ in N2 gas is introduced. The sensitivity is 15 times greater than that of the Pt-SiC sensor. The excellent hydrogen-sensing characteristics of this novel sensor make it very suitable for detecting hydrogen leakage in high-temperature environment. The effects of hydrogen adsorption on the barrier height and hydrogen reaction kinetics are also investigated.

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