Sensing characteristics of a novel NH3-nitrided schottky-diode hydrogen sensor

Wing Man Tang, P. T. Lai, J. P. Xu, C. L. Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

A novel NHi-nitrided Schottky-diode hydrogen sensor has been successfully fabricated Measurements have been performed to investigate the sensitivity, stability and response speed of the sensor at different temperatures and hydrogen concentrations. It can respond to hydrogen variation very quickly and can give significant response ewn at low hydrogen concentration. The studied device exhibits high sensitivity of 350 % at 300 °C when 800 ppm IJ in N2 gas is introduced. The sensitivity is 15 times greater than that of the Pt-SiC sensor. The excellent hydrogen-sensing characteristics of this novel sensor make it very suitable for detecting hydrogen leakage in high-temperature environment. The effects of hydrogen adsorption on the barrier height and hydrogen reaction kinetics are also investigated.
Original languageEnglish
Title of host publicationIEEE International Symposium on Industrial Electronics
Pages43-47
Number of pages5
DOIs
Publication statusPublished - 1 Dec 2004
Externally publishedYes
Event2004 IEEE International Symposium on Industrial Electronics, IEEE-ISlE -
Duration: 4 May 20047 May 2004

Conference

Conference2004 IEEE International Symposium on Industrial Electronics, IEEE-ISlE
Period4/05/047/05/04

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

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